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5 Semiconductor Modeling
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                              Fig. 5.3. Intel Celeron Processor (downside)


                                 A ‘closed’ system of partial differential equations is obtained by coupling the
                              current relations/continuity equations to the Poisson equation for the electric
                              potential:
                                                         2
                                                        λ ΔV = n − p − C(x).
                              This equation is a direct consequence of the Maxwell field equations, when
                              magnetic and relativistic effects are neglected. Its right hand side represents the
                              (negative and scaled) space charge density. The parameter λ, whose square mul-
                              tiplies the Laplace operator in the Poisson equation, is the scaled Debye length of
                              the doped semiconductor device, determining the radius of electrical influence
                              of an impurity ion in the semiconductor crystal. In many real life applications
                              it is a small parameter. It is often assumed that diffusivities and mobilities are
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