Page 149 - Inorganic Mass Spectrometry - Fundamentals and Applications
P. 149

Induct~vely ~o~pled Plasma Mass Spectrometry                  139

         because  any  sample  preparation  or  handling  enhances  chances of contamination
         [368].  However,  many of the  acids  can  cause  sample  introduction  problems if  run
                                       of
         directly.  Often,  large  sample  volumes high-purity  acids  are  evaporated  in  order
         to  improve  detection  limits.  Great  care  must  be  taken  to  prevent  contamination.
              The  purity  of  silicon  and  gallium  arsenide  starting  materials   has  been
                                                                       for
         measured  by  using  ICP-MS  [370-3721.  Impurities  in  materials  used  as  dopants
          semiconductor^ have  also  been  measured  by  using  ICP-MS  [373].
              Vapor phase  dissolution  (VPD) is comonly used for surface  and  contam-
         ination  analysis of serniconductor  wafers  [374-3791. HF vapor is used  to  remove
         a  silicon oxide or native  silicon  layer. A drop of hydrofluoric  acid  or  deionized
         water  (with  a  volume  of  SO to 200 pL) is placed  on  the  surface  and  rolled  around
         the  surface to dissolve  the  metals. The small drop is then  analyzed by ICP-
         using  either  a  direct  injection  nebulizer,  a  micronebulizer,  or ETV. The ability of
         ICP-MS to measure  several  elements  rapidly  in  a  small  volume   of  solution is
         essential.
              Trace  impurities  in  some  gases  used   for semiconductor  processing  have
         also  been  monitored  using  ICP-MS  [380-3821.  It  may   be  necessary  to  use
         specialized  materials for the sampler  and  skimmer  to  prevent  degradation.  In  one
         study,  the  level of iron  from  a  hydrogen chloride cylinder  was  found  to  increase  as
         the  cylinder  was  used  and to depend  on the cylinder-valve  package  [382].
              Impurities  in  photoresists  have  also  been  measured  by  ICP-MS  [383,384].
         Ultrasonic  nebulization  and  electrothermal  vaporization  sample  introduction  ap-
         proaches  have  been  used.
              The current  analytical  capabilities of ICP-MS  provide  a  means assess  new
                                                               to
         low levels of contamination in the semiconductor  industry  [38S].  Contamination
         in  clean  room  air  can  be  detected   at very  low  levels.  Dopant  and  trace  metal
         contamination  on  semiconductor  wafer  surfaces  can   be  monitored.  Ultratrace
         metals  in  deionized  water,  high-purity  acids,  and  other  process  chemicals  can
         often  be  measured at concentrations less than  1  part  per  trillion.




         In  many  chemical  systems,  the  form   of  an  element  controls  its biological  or
         chemical  effect  and its transport or remediation.  Elemental ions in  different  oxida-
         tion  states,  as  different  metal-ligand  complexes  and  various  organometallic  mole-
         cules, often  have  very  different  toxicity.  Certain  species  are  essential  nutrients
         [Cr(III), for example],  whereas  others  are  toxic  or  carcinogenic  [such  as  Cr(VI)].
         Organo~etallic mercury  compounds,  such  as  methylmercury,  are far more  toxic
         than  inorganic  mercury.  Trialkyltin  compounds  are  highly toxic and  tin is present
         in  some  food cans. The transport of  metals  through  soils  and  water  systems  is
         highly species~dependent, Industrial  processes  may also be  highly  dependent  on
         elemental  speciation.  Therefore,  elemental  analysis  alone  often  provides  insuffi-
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