Page 212 - Inorganic Mass Spectrometry - Fundamentals and Applications
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198                                                         Cristy

           the  back of a tungsten frit. The cesium  diffuses  through  the frit, where it is ther-
           mally  ionized.  In the presence of an electrostatic  field, CS+ is accelerated into the
                             A
           instrument  (Fig.  4.32). drawback of cesium is the  necessity of handling  the  metal
           in  inert  gas  glove  boxes. Some have  overcome  this  problem  by  using  cesium  com-
                                                                al. [ 1091 heated
                                                              et
           pounds  that  decompose  or  react  to  release  cesium  in  situ.  Okutani
           cesium  chromate  with  silicon,  which  reacted to release CS and  form  residues of
               and Cr20,. As with  oxygen,  cesium is sometimes  evaporated onto the  surface
           directly.  This  ensures  saturation of the  work  function  effect for CS+ sputtering, or
           alternatively it enhances  the  negative  ion  yield for noble  gas  sputtering.
                The  liquid  metal  ion  source  (LMIS)  provides  the  highest  current  density  and
           the  smallest  probe  size.  In  the  LMIS  (Fig.  4.33), a tungsten emitter tip is coated
           with a liquid  metal  such  as CS, Hg, Ga, In, Sn, Bi, or Au; a high  potential  field is
           then  applied.  Under  these  conditions, the liquid  metal  forms  a “Taylor” cone with
           a small tip from  which ions are  emitted. This small,  very-high-brightness,  very-
           high-cu~ent-density  (~10~ rVcm2)  source  allows  focusing to spots as small  as  20
           nm  with  current  densities  up to 5 A/cm2.  High-resolution  secondary  ion  imaging,
           most  commonly  with  Ga+ and In+ ions, is the forte of LMIS. The very  fine  intense
           LMIS  beam  has also been  used  for micromilling  and cutting in  semiconductor
           analysis  and  repair.




           The primary  ion  column  may  be  nothing  more  than  a vacuum  between the ion
                                             it
           source  and  the  sample  target,  but  generally contains  some  beam  shaping  and  con-
           trolling  elements. The MMA diagram  in  Fig.  4.5 illustrates  common  features. The
           ion  extractor  may be considered  to be part of the ion  source or the  first  element of
                                                                 the
                           A
           the  primary  column. potential  difference  between  the  extractor  and ion  source
           accelerates  the  primary  ions  to the desired  energy,  generally  between  0.2  and  40
           keV. It is desirable  to  filter the primary  ion  beam so that  only  the  selected  species
           strike  the  sample. The IMMA does that  with a primary  magnetic sector; other in-
           struments  use  a Wien  filter.  Beam  shaping  and  directing  are  done  with  electrostatic
           alignment  plates,  apertures,  and  one  or  more  electrostatic  lenses.  With  scanning
           probe-i~aging instruments,  electrostatic  deflection  plates  are  required  to  control
           the position of the beam  on  the  target.  Time-of-flight  instruments  require  pulsed
           acceleration of the  primary  ions  and often  have electric or  magnetic  field  “bunch-
           ing”  elements  to  sharpen  the  pulse primary ions.
                                       of



           The sample  mount  requires  an electrical  connection  to  maintain a constant  poten-
           tial  on  the  sample  surface.  In  quadrupoles  this generally  ground,  and  extraction
                                                is
           lenses  are  biased to collect  the  secondary ions. Magnetic  sector  instruments  usu-
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