Page 171 - Photonics Essentials an introduction with experiments
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Lasers

                                                                Lasers  165

          Substituting (7.19) into (7.18),
                                               2 2
                                            8 n f
                                      k th
                                N th =    ·                          (7.19)
                                             2
                                      A 21  c g(f)
            The spontaneous emission rate A 21 is determined by the inverse of
          the spontaneous emission lifetime   21 . This lifetime can be measured
          by exciting the laser material with a light pulse from an external
          laser emitting photons with energy above the band gap of the semi-
          conductor. The semiconductor will emit photoluminescence that dies
          out with the spontaneous emission lifetime. Typical values for   21 are
          several nanoseconds. Although this may seem short, it is easily meas-
          ured with conventional equipment.
            The threshold current density can be expressed by combining Eqs.
          7.15, 7.16, and 7.19:
                                                2 2
                              qtN th         k th n f
                                          21
                        J =        = qt             A-cm –2          (7.20)
                         th
                                              2
                                 r         r  c g(f)
            You would prefer to have a lower threshold current. There are some
          variables in this expression that are under the control of the laser de-
          signer. The thickness of the recombination region can be reduced
          physically. This was first done by making a heterostructure, and has
          been developed into the currently used quantum well design, where
          the recombination is restricted to a potential well of thickness compa-
          rable to the de Broglie wavelength; that is, about 10 nm. The quan-
          tum well laser design has a second equally important effect of lower-
          ing the threshold current. This structure narrows the gain spectrum,
          increasing g(f).
            In a semiconductor laser having a band structure similar to that
          shown in Fig. 7.6, the gain function can be adequately represented by
          a Gaussian distribution. The value of the distribution at its maximum
          value can be expressed in terms of its full width at half maximum
          (usually abbreviated FWHM).
                              2
                    g(f max ) =     (Gaussian gain distribution)     (7.21)
                              f

          The exact form of the gain distribution function is almost never
          known. It can be adequately approximated by

                                             1
                                   g(f max )                         (7.22)
                                             f
          The fundamental nature of stimulated emission dictates that the
          laser will want to emit light whose frequency lies as close as possible



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