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Direct Modulation of Laser Diodes

                                           Direct Modulation of Laser Diodes  187

          Now insert the expression for  N in this equation:
            dn      1      dn       1              1       dn       1
                                             1
                              N   +      = –                  N   +
             dt  B 21 fan    dt                r  B 21 fan    dt
                                          – B 21 fK th  N
                  d 2       1  d                          1
                                            2
                                         2
                      N   +       N   + B 21 f aK th n    N   +    = 0  (8.17)
                  dt 2        r  dt                        r
          This is a second order differential equation that describes a damped
          oscillation with an angular frequency:
                                           2
                                         2      n
                                  R =  B  21  f  aK th               (8.18)
          and a decay time of 2  r .
            The solution will be of the form:

                              N   (t) ~ e –t/2  r sin(  R t +  )     (8.19)
            We have obtained some results that we would like to use to direct
          modulation of semiconductor lasers in communications applications:

          1. The relaxation oscillation dies out in a time ~ 2  r . This would put a
             limit on the bit rate, which must be low enough to allow the optical
             output power to come to steady state. A typical value for the free
             carrier recombination time in GaAs is about 2 nanoseconds. If the
             relaxation oscillation dies out in 5 nanoseconds, the corresponding
                                                                     –9
             modulation bandwidth would be estimated at  f = 1/(5 × 10 )	 =
             60 MHz. However, modulation rates of 10 GHz in semiconductor
             lasers can be obtained experimentally. This would imply a much
             shorter carrier lifetime, on the order of 30 picoseconds. Such a com-
             parison suggests that the recombination time is not constant, but
             in fact depends strongly on the injection rate. This is an under-
             standable result. Photon emission must be balanced with the
             pumping rate. So, the recombination rate must increase in order to
             maintain equilibrium at high carrier injection rates.
          2. In order to reach higher modulation rates you would want to push
             the relaxation oscillation frequency well above the modulation
             rate. The relaxation oscillation frequency will depend on the stimu-
             lated emission rate B 21 and the band gap of the material (E g = hf).
             Whereas the band gap will not change, there is no physical reason
             why the stimulated emission rate could not increase as the photon

             density increases. The frequency also depends through n   and K th
             on the amount by which the laser is driven beyond threshold in or-
             der to send a “1.”



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