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Photodiodes

          54   Photonic Devices


                               Quantum efficiency is constant
                               Optical power is constant

                     Photocurrent












                                                   Energy Gap
                                   
, Increasing wavelength

          Figure 3.9. Responsivity gives the photocurrent that results from a fixed incident opti-
          cal power. Since it takes more photons to produce 1 watt of optical power as the photon
          wavelength increases, the responsivity will also increase as the wavelength increases,
          provided, of course, that the quantum efficiency stays constant.


          Optical reflection occurs at the photodiode surface because the index
          of refraction of the semiconductor (n   3.4) is different from the re-
          fractive index of air (n = 1). Fresnel’s equation can be used to calculat-
          ed the required reflection coefficient. Frensel’s equation can be ap-
          plied if the interface between the semiconductor surface and air is flat
          and planar over many wavelengths distance. For light impinging on
          the photodiode at normal incidence, the reflection coefficient (Fres-
          nel’s law) is calculated as follows:

                                   E R   n 1 – n 2
                                      =                              (3.29)
                                   E i   n 1 + n 2
            where E R and E i are the amplitudes of the reflected and the inci-
          dent light beams, respectively. The reflection coefficient is given by
          the square of this ratio:

                                 (n 1 – n 2 ) 2  4
                            R =                 = 25%                (3.30)
                                 (n 1 + n 2 ) 2  16
            In the case of a photodiode having a planar surface, the maximum
          possible quantum efficiency for any kind of semiconductor detector is
          actually only 75%.
            If you introduce a third layer, situated in between the semiconduc-




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