Page 445 - Power Electronics Handbook
P. 445

434   Index

                          Heating, 407                     Inter-winding capacitance, 86
                          Heatsink, 66                     Interbase
                           compound, 69                      resistance, 77
                           construction, 68                  voltage, 78
                           equivalent circuit, 63          Interdigitated. 31
                          Heat pipe, 72                      gate, 47
                          Heat transfer, 63                Interphase transformer, 185, 228
                          Heat transport, 73               Intrinsic
                          Hermetic seal, 60                 carrier, 14
                          H.F. pulse width modulation. 296   conduction, 12
                          High frequency                    stand-off ratio.  76
                           invetter, 303                   Inverse parallel, 425
                           pulse-width  modulation, 35 1   Inversion, 178
                           transistor, 60                   controlled, 139
                          High-rupturing capacity fuse, 129   layer, 34
                         High-voltage d.c. transmission, 362   Inverter, 140, 145, 284,426
                         High-voltage transient, 123        bridge, 288
                         Historical development, 3          circuit design, 335
                         Hockey puck, 59. 68                circuits, 285
                         Holding current. 43                commutahon cinuits, 295
                         Hole diffusion constant, 14        commutation loss reduction, 307
                         Hole-electron pair, 15. 52         contigurations, 286
                         Holes, 13                          control circuit, 350
                         Hornetaxial, 30                    current-fed, 345
                         Hot carrier, 15                    current ratings, 338
                         Hot spots, 29.  163                enhancements, 303
                         HRC, 129                           fixed-frequency. 31 1
                         Hunting, 174                       high frequency, 303
                         HVDC, 362                          lower harmonic elimination, 315
                         Hybrid circuits, 89                McMurray-Bedford.  307
                                                            push-pttll, 286, 2%
                                                            sequencing, 304
                         i% trating, 129, 133               starting circuit, 294
                         IEC, 114                           transistor, 290
                         IGBT, 37                           unidirectional switching, 31 1
                         Impurity,  10                      voltage boosting, 308
                          concentration, 34                 voltage control, 310
                         Incandescent lamp, 408             waveform synthesis, 332
                         Incident field, 108              Inverting bridge, 290
                         Incoherent frequency, 100        Ion
                         Induced current control, 399      beam lithography, 9
                         Induction                         implantation. 5, 10, 23
                          generator, 405                  Ionisation coefficients, 16
                          heater, 410                     Isolating
                          heating, 348                     component, 8 1
                          motor, 367                       transformer, 85
                        Inductive coupling. 128           Isolation, 82
                        Input capacitance, 36
                        Input power factor, 210
                        Inrush current, 101, 123, 154
                        Insulated gate bipolar transistor, 37   JFET, 32
                        Integrated circuits, 81, 101, 175. 241. 380   Junction capacitance, 27
                        Integral                          Junction field effect transistor, 32
                          cycle control, 425             Junction temperature, 20.64
                          half-cycle control, 172, 408   Junction voltage, 13
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