Page 342 - Semiconductor For Micro- and Nanotechnology An Introduction For Engineers

ground 103, 119, 120
Raleigh) 288
ground energy 120
ground wavefunction 120 Strutt, John William (Lord
subsystem 170, 177
quantum 181 superlattice 90
solid 169 superposition
stationary 103 wavepacket 163
stationary state 103 superposition of plane waves 100
statistical mechanics 84, 169 surface
statistics 169, 170 crystal 90
Maxwell-Boltzmann 178 phonon 88
streaming motion 193, 195, 202, 205, symmetry
217, 231, 240 points 76
T Taylor series 172, 176 transit time 153
technological transition 66, 106, 113, 114, 127, 303
impact 143 dipole matrix element 268, 271,
temperature 272
Debye 85 interband 268, 269, 270
tensor product 199 intra-band 268, 270
theorem matrix element 246
Gauss 106, 200 optical 18
thermal optically induced 267
conductivity 87 rate 239, 245
expansion 86 region 89
expansion coefficient 87, 88 transition probability 196, 201, 270
thermodynamic transition rate
flux 204, 205, 207, 213, 215, 253 particle 196
thermodynamics 169, 192 translational invariance 103
thermovoltage transmission
absolute differential 212 particle 117
tight binding method 137 ray 163
time transport
charge relaxation 152 electron 191
magnetic diffusion 153 theory 191
transit 153 trapped wave 164
Timoschenko 288 travelling wave 82, 116
total energy 172 trial solution 115
transformation tunneling 115
coordinate 119
U unbound minimum 121
electron 108 uncertainty principle 101
unbounded vacuum 163 unit pulse function 151
uncertainty
V vacuum 150 wave 192, 194, 195, 197, 199
valence band 18, 136, 137, 140 vibration
vector crystal mode 71
identity 145 lattice 81
potential 149 quantized lattice 118

Semiconductors for Micro and Nanosystem Technology 339