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8 Tunable ExternalCavity Semiconductor Lasers 437

32. G. Eisenstein and L. W. Stulz, "High Quality Antireflection Coatings on Laser Facets by Sput-
tered Silicon Nitride,"App/. Opt. 23(lj, 161-163 (1984).
33. 0. R. Scifres, 1%'. Streifer. and R. D. Burnham, '.GaAs/AgAlAs Diode Lasers with Angled
Pumping Stripes.'' IEEE J. Qiiuii~iinz Electron. QE-14, 223-227 (1978).
34. N. K. Dutta. "Optical Amplifiers," in Proogress in Optics, Vol. 31, p. 202, North-Holland, Ams-
terdam (1993).
35. M. C. Robbins, J. Buus, and D. J. Robbins. "Ana1)sis of Antireflection Coatings on Angled
Facet Semiconductor Laser Amplifiers." Electron. Leu. 26, 38 1-382 (1990).
36. N. K. Dutta. A. B. Piccirilli. hl. S. Lin, R. L. Brown. J. Wynn. D. Coblentz. 'I-. TVJU. and U. K.
Chakrabarti. '-Fabrication and Performance Characteristics of Buried-Facet Optical Ampli-
fiers,"/. Appl. Phxs. 67, 3913-3947 (1990).
37. C. E. %?eman and L. Hollberg, .'Using Diode Lasers for Atomic Physics." Rev. Sci. Insrrui?z.
62(1), 1-20 (Jan. 19913.
38. M. VV. Fleming and A. Mooradian, "Spectral Characteristics of External-Cavity Controlled
Semiconductor Lasers." IEEE J. Qiiaiztwn E/ecrron. QE-17(1 j. 44-59 (Jan. 198 1).
39. E. Patzak. A. Sugimura, S. Saito. T. hslukai. and H. Olesen. "Semiconductor Laser Linewidth ii!
Optical Feedback Configurations," Electrori. Lett. 19(23j, 102&1027 (Nov. 1983).
40. R. Wyatt, K. H. Cameron, and hl. R. Mattheas. "Tunable Narrow Line External Cavity Lasers
for Cohsrent Optical Systems,"Bi: Telecoin. Teclinol. J. 3, 5-12 (1985).
31. R. A. Linke and K. J. Pollock. "Linewidth vs. Length Dependence for an External Cavity
Laser." in Proc. 1Orlr IEEE Inr. Semiconductor Laser Co$. Kanazawa, Japan. p. 118 (19863.
42. M. Ohtsu, K.-Y. Liou. E. C. Burrons. C. A. Bums, G. Eisenstein, ..A Simple Interferometric
Method for Monitoring Mode Hopping in Tunable External-Cavity Semiconductor Lasers:' J.
Lighhtwe Techno/. 7, 58-75 (1989).
43. D. Mehuys. D, Welch, and D. Scifres. "11%' cw, Diffraction-Limited, Tunable External-Cavity
Semiconductor Laser." E/ectron. Lert. 29( Ili, 1254-1255 (July 1993).
11. 4. Olsson and C. L. Tang, "Coherent Optical Interference Effects in External-CaiFity Semicon-
ductor Lasers,'' IEEE J. Qiiaiitiim Electron. QE-17, 1320-1323 (1981).
45. P. Zorabedian, W. R. Trutna, Jr., and L. S. Cutler. "Bistabilit? in Grating Tuned External-Cavity
Semiconductor Lasers." J. Qiiaiitim Electron. QE-23, 1855-1860 (No\,. 1987).
46. P. Zorabedian. "Tuning Fidelity of 4cousto-Optically Controlled External-Cavity Semiconduc-
tor Lasers3"IEEEJ. Lighnmre Techno/. 13, 62-66 (1995).
17. R. E. Wagner and \V. J. Tomlinson, "Coupling Efficiency of Optics in Single-Mode Fiber Com-
ponents." App!. Opt. 21.2671-2688 (1982).
18. H. Kogelnik and T. L6. "Laser Beams and Resonators,"App/. Opt. 5, 1550 (1966).
49. A. E. Siegman. Lasei-s, University Science Books. Mill Valley, CA ( 1986).
50. J. A. Arnaud, Bean7 and Fiber Optics, New York. Academic Press (1976).
51. A. Gerrard and J. M. Burch. M~7rri~~ Merhods in Oprics, John Wile? and Sons. Ne\% York
(19751.
52. D. Kuntz. "Specifying Laser Diode Optics," Laser Focirs. pp. 44-55 (Mar. 1984).
53. NSG SELFOC Handbook.
51. R. Kingslake, Lens Design Fimdamerira/s. Academic Press. New York ( 19783.
55, M. A. Fitch, "Molded Optics: Mating Precision and Mass Production," Phororr. Specfix 25,
83-87 (Oct. 1991j.
56. H. .4sakura, K. Hagiwara, M. Iida. and K. Eda. "External Cavity Semiconductor Laser with a
Fourier Grating and an Aspheric Lens, Appl. Opt. 32,1031-2038 (Apr. 1993).
57. H. Heclcscher and J. A. Rossi, "Flashlight-Size External Cavity Semiconductor Laser with
Narron--Linewidth Tunable Output." App/. Opr. 14, 94-96 (1975).
58. H. S Sommers, Jr.. "Performance of Injection Lasers mith External Gratings," RCA Rev. 38,
33-59 (Mar. 1977).
59. H. Kunahara, M. Sasaki. and N. Tokoyo, "Efficient Coupling from Semiconductor Lasers into
Single-Mode Fibres with Tapered Hemispherical Ends,'' .4pp!. Opt. 19, 2578-1583 (1980).