Page 513 - Tunable Lasers Handbook

Index 473
LiCaA1F6. 265 Xe,”, 41
MgF:. 277 Xeir. 40
YAG. 272 XeCI, 6.13.34,35,40, 174.175
Heterodyne XeF, 6.3438, 35.40. 174
CO, laser system. 87-88, 137-133 free electron laser (EL), 2, 3,4443468
Homogeneous broadening (see Broadening) cavities, 456459
HMPGI grating oscillator (see Oscillators) facilities. 460468
general characteristics, 447449
harmonic operation, 453455
Inductive stabilization, 57 oscillator. 444
Inhomogenems broadening (see Broadening] physics, 443417
Injection seeding. 435 polarization, 45.153
Interfexnce power, 16 1
equation. 16-1 7 tuning. 350456
filter, 392.102.431 wavelength range. 361
one-dimensional, 16 wiggler. 4446.451453,455~ 459460
two-dimensional. 17 HgBr, 3. 174
krypton ion. 187
metal-vapor
Lamb dip, 83.84.86 cadmium. 174
Laser dye molecule, 168. 173. 175. 182-183. calcium. 171
196-198.200-213 copper. 3. 174, 175, 178
absorber. 191. 196197 gold, 171
Lasers strontium. 174
argon ion. 187 nitrogen. 3, 173
CO,. 6,13.35 semiconductor, 1.3,5. 13.319435
COz isotope, 63-161 AlGaAsIGaAs, 363
absolute frequencies. 95-1 37 AIGaInPIGaAs. 363
broadening, 76-79 alignment stability. 380
design, 149-151 alignment tolerance, 381
pressure shift, 137-143 astigmatism. 356. 359, 363
regular band laser transitions. 71-76 bulk active region, 358
reference, 88 chromatic aberration, 382.383
small signal gain, 144-119 GaAIAs. 2. 13.358
spectral purity. 79-82 GaAlAsIGaAs, 364
specrroscopic applications. 159-160 GaAsIAlGa4s, 363
stability, 79-95. 137-143 internal loss, 353
dye, 2, 3. 5. 13. 14 InGaAIP/GaAs. 363
CW. 1.3. 185-191 InGaWAlGaAs. 365
femtosecond, 191-197 InGaWInGaAsP, 365
flashlimp-pumped, 179-1 85 InGaAsflnP. 363
laser-pumped. 177-180. 184. 195, 198, 199 lnGaAsPIGi~4s. 363
pulsed, 2.3, 13. 11. 172-185. 195. 198, InGaAsPfinP, 2, 13,363.361
I99 lead-salt. 15.5-158
solid-state, 11, 195. 198. 199 mirror loss. 353,376.377
excimer. 33-59 mode hopping. 377
Ar2*. 11 mode selectivity, 378,407409
.4rC1, 40 multimode oscillation, 373
AI%, 3.6. 13. 34, 35. 37 multimode suppression. 417419,424
discharge. 53-59 quantum well, 358.363-365.103
Kr2*, dl reflectance facet. 361. 365-368, 374, 399.
KrCI. 30 115118,123426
KrF. 3.6. 13.31.35,38. 171 sidemode suppression. Lu)1,403.404,418,431