Page 432 - Power Electronics Handbook

List of symbols 421
breakover voltage
V(BO)
VGD gate non-trigger voltage
VCE(sat) collector-emitter saturation voltage
VDRM repetitive forward blocking voltage
vDS gate-drain voltage of a FET
VDSM non-repetitive peak on-state voltage
vDS(P) pinch-off drain-source voltage
VGQM gate turn-off voltage
vGS gate-source voltage of a FET
load voltage
r.m.s. load voltage
transformer primary voltage
repetitive peak reverse voltage
non-repetitive peak reverse voltage
supply voltage
threshold voltage
average forward voltage drop
forward voltage drop
zener voltage

width
width of depletion layer at breakdown
width of channel
width of depletion layer
width of n region
width of p region
width of i region

reactance
impedance
conductor impedance
capacitor impedance
dynamic impedance
inductor impedance
impedance of electromagnetic wave
transfer impedance
transient thermal impedance
transient thermal impedance junction to case
transient thermal impedance junction to ambient
common base gain, or delay angle
average ionisation coefficient
ionisation coefficient for electrons
minimum delay angle
delay angle (negative group)
ionisation coefficient for holes, or delay angle (positive group)

gain
gate turn-off gain