Page 434 - Power Electronics Handbook

Appendix 2
Glossary of terms

hti-pudlel: The connection of two unidirectional power devices in
parallel, such that they conduct in opposite half cycles. This is also known
as an inverse parallel or a back-to-back connection.
ABS: Antilocking braking system. Electronic control system used on cars to
prevent skidding and loss of control on braking.
ASCR: Asymmetrical silicon controlled rectifier. A thyristor in which its
forward voltage rating is greater than its reverse voltage rating.
Av.IPncbc breakdown: The conduction mechanism within a semiconductor
when minority camers attain sufficient energy to cause a chain reaction,
resulting in very rapid build-up of current.
BGA: Ball grid array. An integrated circuit package using solder balls
instead of leads for connection onto the board or substrate.
Bi-nal device: A power semiconductor capable of conducting in
both directions.

Blocking voltage: A measure of the voltage which a power semiconductor
can withstand, in the forward or reverse direction, without breaking down.
Breakdown voltage: The voltage at which a power semiconductor loses its
voltage-blocking capability.
Bridge converter: An arrangement of power rectification devices which
provides a d.c. output from an a.c. input, without requiring a
centre-tapped load. (See also @-pull converter.)
Borst firing: See Integral cyde control.
Bypass: A component or a circuit used to carry the load current, so
bypassing the main switching power device.
Chopper: A term commonly used for a circuit which regulates the amount
of power flowing from a d.c. source to a d.c. load.
Commutation angle: The angle of overlap between phases of the a.c.
supply, caused by the reactance in the supply, when conduction is changing
over between the phases. This is also known as the overlap angle.
Commutation diode: See Free-wheeling diode.

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