Page 333 - Semiconductor For Micro- and Nanotechnology An Introduction For Engineers

conduction minimum 139, 140
type 136
diagram 314
direct gap 137 barier
infinity 116
edge 187 barrier
edge minimum 139 inside 116
energy 137 potential 115
extremities 137 basis function
extremity 139 continuous 113
filled 136 Bernoulli 288
forbidden 96, 140 Boltzmann
gap 18, 136 transport equation 192, 227, 231,
heavy hole 137 239, 240, 275
index 136 Boltzmann transport equation
indirect gap 136, 137 semi-classical 192
light hole 137 bond
lower bound 136 dangling 90
minimum 137 Bose-Einstein
occupied 136 distribution 183
parabolic structure 139 boson 170
second derivative 140 bound state 116
spitting 140 boundary condition 108, 111, 167
splitting 96 periodic 115, 173
structure 50, 77, 96, 136, 137, 139, box potential 116
140, 314 infinite 111
structure silicon 140 Bragg relation 98
structure, cubic crystal 137 branch
structure, metal 314 acoustic 89
unoccupied 136 dispersion curve 71
upper bound 136 optical 71
valence 18, 136, 137, 140 Brillouin zone 76, 77
valence energy 137 BTE 192, 193, 197, 199, 200, 201,
band structure 202, 204, 205, 227, 228,
electronic 126 230, 231
formation 123, 133 phonon 197
real 137 bulk modulus 87

C canonical mobility 147
distribution 175 monopole 146
partition function 175 relaxation 154
canonical ensemble 170, 174, 176, relaxation equation 153
177 relaxation time 152
canonically conjugated variable 193 classical mechanics 85
carrier band 140 classical wave equation 102
carrier density 199 commutation 100
cavity commutator 119, 121
1D 163 compressibility 87
center-of-mass 71 conduction 97
charge conduction band 97, 136, 137, 139,
conservation 153 140
imbalance 153 minimum 139, 140

330 Semiconductors for Micro and Nanosystem Technology