Page 332 - Semiconductor For Micro- and Nanotechnology An Introduction For Engineers

energy level 50, 125
energy transfer 126
rearrangement 90
regular arrangement 39
force 64, 74 quantum state 126
foreign 28, 34 regular lattice 140
formation of molecule 135 relative position 29
gas 90 rest cell positions 70
harmonic displacement 70 separating distance 52
hydrogen 96, 123, 125, 126, 128, shared electrons 49
137 shared orbital 49
individual 17 silicon 17, 33, 36, 50
interaction strength 54 single 17
ionized 126 site 57, 72
lattice 45, 64, 71, 74 spacing 115
lattice constant 90 structure 137
lattice position 54 substitution 88
length scale 17 surface 90
mass 67 type 38
massive 64 vibrating 28
momentum 126 vibration 17
motion 27 atomic force microscope 22, 23, 29,
movement 66 30
moving apart 135 atomic interaction
nearest neighbor 49, 76 three 53
nucleus 33, 123 two 53, 55
on 90 attractive potential 52
oppositely charged 48 available state 178
orbital 51, 123, 137 average 160, 180, 181, 183, 197, 198,
oxygen 36 219, 220, 221, 227, 230,
pair 48, 55 237, 238, 296, 297, 323
pair interaction 53 density of property 57
position 45, 55, 64 electron position 99
position in DAS layer 91 energy 84, 174, 175
position vector 54 number of particles 175, 179, 180
positions 40 time 49
positively charged 135 axial 164, 165, 166, 261
potential 96, 140 azimuthal
putting together 126 angle 123
quantum mechanical model 96

B balance equation 191, 201, 203, 220 265, 268, 269, 270, 275,
density 220 278, 279, 285, 301, 303,
energy 209 304, 308, 314, 315, 316,
global 192, 220 317, 318, 319, 320, 321,
moment 220 323
momentum 221 allowable energy 134
ball 148 carrier 140
band 97, 182, 184, 185, 186, 187, conduction 18, 127, 130, 136, 137,
188, 189, 190, 192, 203, 139, 140
204, 208, 223, 239, 240, conduction edge 127
244, 247, 260, 261, 264, conduction energy 137

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