Page 405 - Tunable Lasers Handbook
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8  Tunable External-Cavity Semiconductor  Lasers   365

                     also helps reduce nonradiative losses due to Auger recombination, which  is  a
                     potential problem for lasers at h > 1 pm. Typical MQW devices have four to five
                     wells. A basic introduction to the physics of quantum-well lasers is given in the
                     textbook by Yariv [13]. A much more detailed treatment can be found in the arti-
                     cles contained in  the book edited  by  Zory  [19]. The tuning ranges  of  several
                     ECLs with quantum-well gain media are tabulated in Table 3.


                     2.10  Facet Reflectance Control
                          7
                     2. IO.  Requirements and Overview of Methods
                         It is desirable to operate an ECL in the regime of  strong external feedback in
                     order to maintain acceptably low output power ripple. good tuning linearity, and to
                     avoid such undesirable effects as bistability [23] and axial mode instability [24].
                     The requirement for strong external feedback is that the mirror losses of the solitary
                     diode cavity are much greater than the combined mirror, filter, and coupling losses
                     of  the external cavity At a minimum, the  solitary cavity loss should exceed the
                     external-cavity loss by at least 30 dB. For an extended-cavity configuration (Fig. 1)
                     in which the solitary and external cavities have one mirror in common, this require-
                     ment becomes Rfacst < 10-2 x Rex[ where Rfaca and Rexr are the power reflectances of
                     the feedback-coupling facet and the external feedback optics, respectively.
                        For  an ECL,  an  external feedback  level of  ReXt = 0.10 to  0.30 is  typical.
                     Therefore, a rule of thumb is that the facet reflectance should be -1  x  10-3  or
                     less  in  order  to  maintain  good  ECL  performance.  Because  the  Fresnel
                     reflectance  of  the  semiconductor-air  interface  is  -0.31,  some  means  of  facet
                     reflectance reduction must be used. The technologies available for reducing the
                     reflectance of  gain media facets in external cavity lasers and optical amplifiers
                     are  (I)  dielectric antireflection coatings,  (2) tilted  gain  stripes, and  (3) buried
                     facets. In addition, methods (1) and (2) can be combined.
                     2. 7 0.2 Antireflection-Coated Facets
                     2.10.2.1 Single-Lager Coating Design
                        The most common way  to reduce facet reflectance is through the deposition
                     of a dielectric antireflection (AR) coating. For a plane wave incident at an interface


                     TABLE 3  Tuning Ranges of Quantum Well Gain Media

                                                          Center h   Tuning range
                     Material                Structure     (nm)      (nmJ     Reference
                     GaAs/r\lGai\s (GaAs substrate  J   SQW   800     105       POI
                     InGaAs/AlGaAs (GaAs substrate)  Strained SQW   925   170   r211
                     InGaAdInGaAsP (InP substrate)   MQW   1540       200       [22]
   400   401   402   403   404   405   406   407   408   409   410