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DYE-SENSITIZED SOLAR CELLS  35


                       materials and inexpensive production, in the near future they are expected to offer a
                       price-performance ratio large enough to replace a significant amount of electricity
                       generated by fossil fuels.


                       COMPARATIVE ANALYSIS
                       In order to compare differences between existing solid-state semiconductors and DSCs,
                       it would be important to review the construction and operational characteristics of
                       both technologies. As discussed earlier, conventional solid-state semiconductor solar
                       cells are formed from two doped crystals, one doped with an impurity that forms a
                       slightly negative bias (which is referred to as an N-type semiconductor and has a free
                       electron) and the other doped with an impurity that provides a slight positive bias
                       (which is referred to as a P-type semiconductor and lacks free electrons). When placed
                       in contact to form a PN junction, some of the electrons in the N-type portion will flow
                       into the P-type to fill in the gap, or electron hole.
                         Eventually, enough electrons flow across the boundary to equalize what is called the
                       Fermi levels of the two materials. The resulting PN junction gives rise to the location
                       where charge carriers are depleted or accumulated on each side of the interface. This
                       transfer of electrons produces a potential barrier for electron flow that typically has a
                       voltage of 0.6–0.7 V.
                         Under direct exposure to solar rays, photons in the sunlight strike the bound elec-
                       trons in the P-type side of the semiconductor and elevate their energy, a process that
                       is referred to as photo-excitation. Figure 3.6 shows a DSC epitaxial configuration.

                       HIGH-ENERGY CONDUCTION BAND

                       As a result of impact of photons, the electrons in the conduction band are prompted to
                       move about the silicon, giving rise to electron flow, or electricity. When electrons flow







                       −
                                                                          TRANSPARENT
                                                                          CONDUCTOR



                                                                         ELECTROLYTE
                       +

                                                                       CATALYTIC
                                           TiO  PARTICLES COATED       CONDUCTOR
                                             2
                                            WITH DYE MOLECULES
                        Figure 3.6  DSC epitaxial configuration.
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