Page 150 - Elements of Chemical Reaction Engineering 3rd Edition
P. 150

122                                  Rate Laws and Stoichiometry   Chap. 3

                           P3-2OC  For families of  reactions, the Polanyi-Semenov equation can be used to esti-
                                  mate activation  energies from the heats  of  reaction, AH,  according to  the
                                  equation

                                                        E  = C - ct(-AHR)             (P3-20.1)
                                  where 01  and C are constants. For exothermic reactions ct  = -0.25 and C =
                                  48 kJ/mol, while for endothermic reactions ct  = -0.75 and C = 48 kJ/mol.
                                  However, these values may  vary somewhat from reaction family to reaction
                                  family [K. J. Laidler, Theories of  Chemical Reaction Rates (New York, R. E.
                                  Krieger, 1979), p. 381. (Also see Appendix J)
                                  (a)  Why is this a reasonable correlation?
                                     Consider the following family of  reactions:

                                                                      E        -AHR
                                                                   (kcallmol)   (kcaVmo1)
                                          H + RBr  --+   HBr + R      6.8      17.5
                                          H + R'Br  4 HBr t R'        6.0      20.0


                                  (b)  Estimate the activation energy for the reaction
                                                  CH3. + RBr  --+   CH3Br + R.

                                     which has an exothermic heat of reaction of  6 kcal/mol (Le., AH,  = -6
                                     kcai /mol).
                          P3-21B  The gas-phase reaction between chlorine and methane to form carbon tetra-
                                  chloride and hydrochloric acid is tb be carried out at 75°C and at 950 kPa in
                                 a continuous-flow reactor. The vapor pressure of carbon tetrachloride at 75°C
                                  is approximately 95 kPa. Set up a stoichiometric table for this reaction with
                                 phase change. Calculate the conversion  of  methane at which  condensation
                                 begins. Plot the concentrations and molar flow rates of each species as well as
                                 the total molar flow rate as a function of conversion for a stoichiometric feed.
                                 The volumetric flow rate is 0.4 dm3/s.
                          P3-22B  The reaction
                                          CzH,(g)  + 2Brz(g)  --+   C,H4Brz(g,C) + 2HBrk)
                                 is to be carried out at 200°C and 2500 @a.  The vapor pressure of  1,Zdibro-
                                 moethane at 200°C is 506.5 Wa. With k  = 0.01 dm6/mo12.min. The reaction
                                 is first order in  C,HS and second order in  Br,.  Calculate the conversion of
                                 ethane at which condensation begins. Plot the concentration and molar flow
                                 rates of cach species as well as the total molar flow rate as a function of  con-
                                 version for a stoichiometric feed. The volumetric flow rate is 0.5 dm3/s. (Ans.:
                                 Xcond = 0.609.) Are there a set of feed conditions (e.g., equal molar) such that
                                 the concentration of C2H6(g) will be constant after condensation begins?
                          P3-23B  Chemical vapor deposition (CVD) is a process used in the microelectronics
                                 industry to  deposit thin  films of  constant thickness on  silicon wafers. This
                                 process is of  particular importance in the manufacturing of  very  large scale
                                 integrated circuits. One of the common coatings is Si,N,,  which is produced
                                 according to the reaction

                                           3SiH4(g) + 4NH3(g)  __j  Si3N4(s) + 12H2(g)
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