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Vacuum and Tritium System  Chapter | 6    185


             or blow up, leaving cavities and voids. This is accompanied by the injection of
             metal particles and He atoms into the plasma.
                As the energy spectrum of α-particles bombarding the wall, and the irra-
             diation temperature range are very wide, there may be different generations of
             swells and voids in a metal. A critical He infiltration, at which bubble blowing
                                          17
                                               18
                                                        2
             up and void formation begins is 10  –10   atom/cm . The temperature range
             (0.35–0.6) T  is most risky as metal strength is already deteriorated, while the
                       m
             rates of implanted atoms’ diffusion and bubble migration are not high enough at
                                                                  ∗
             these temperatures. The critical concentration of implanted He, C  (expressed                             CHe∗
                                                                 He
             through the He-metal atomic ratio in the T/T  ≤ 0.4 range), at which surface
                                                  m
             deformation begins, is determined empirically as
                                                T
                                      C * He  = 0.5 −  .
                                                T m                                                                 CHe*=0.5−TTm.
                                    22
                                             2
                Blistering  stops  at  ∼10    atom/cm .  This  phenomenon  may  show  up –
             though at much higher critical doses – when metals are bombarded by H-ions.
             Blistering may also have a non-radiation origin.
                Another source of impurities are the numerous unipolar microarcs occur-
             ring on the coating surface. As a matter of fact, they become a dominant source
             of impurities at very high stresses. The microarcs occur because the electrons
             travel at a much higher speed than the ions. As a result, any electrode contacting
             with the plasma gets a negative ‘floating’ potential
                                          kT    m
                                     U  =  e  ln  i  ,
                                      p
                                           e 2  2 πm e                                                              Up=kTe2elnmi2πme,
             where T  is the plasma electron temperature and m  is the ion mass. In hydro-
                    e
                                                      i
             gen plasma, U  ≈ 3kT , the result being that at T  = 10 eV, the potential is high
                              e
                                                    e
                         p
             enough to initiate an arc between the electrode and the plasma. The discharge
             current in unipolar arcs is generally 10–50 A; in most cases, it is close to 20 A.
             Arcing is particularly intense during a plasma column formation (20–30 ms)
                                                                           16
             and at the end of an operating cycle. Arc burning time is 0.1–50 µs. From 10
                 18
             to 10  impurity atoms are emitted from the cathode spot into the plasma during
             each pulse. On average, there are 30 elementary charges travelled through an
             electric circuit for each evaporated cathode atom.
                Unipolar microarc suppression methods mostly consist in the use of ultra-
             high-vacuum-aided removal of oil films, dielectric implants, adsorbing layers,
             and surface microrelief levelling, as shown in Fig. 6.1.
                A flux of ‘runaway’ electrons with energies of a few hundreds of keV may
             also cause impurity influx splashes. These arise at the early stage of a plasma
             column generation and exist for 0.01–10 µs. ‘Runaway’ electrons produce a
             total current of around 1 kA. Intensive flows of impurity atoms can be driven
             by discharge current disruptions, when during 0.3–1 ms a plasma column shifts
             towards the wall and strikes it, causing a local overheating, thermal desorption
             and evaporation of the wall material.
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