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Vacuum and Tritium System  Chapter | 6    187


                The flow of impurities coming to the plasma from the wall is proportional to
             the flow of electrons incident on the wall from the plasma:
                                                    W
                                          W e
                                       γ
                                  N imp  =⋅   ≈ γ ⋅  α
                                                 e
                                         E e bnd   E e bnd                                                          Nimp=γ⋅WeEe bnd≈γe⋅WαEe bnd,
             where W  and W  are the electron flow power and α-particle flow power, respec-
                          α
                    e
             tively, E     is the electron energy in the boundary area, and γ  is the amount of
                                                              e
                    e bnd
             impurities knocked out of the wall by incident electron. The values of γ  vary
                                                                       e
             widely depending on the type of material, impurity content, surface condition
             and absorbed dose density, D. In the course of irradiation, the flow of desorbed
                                                                 −7
             atoms declines according to the empirical formula γ  ≈ 4.8 × 10  D −0.63 . The
                                                       e
             formula is valid for pure stainless steel. Stimulated gas emission also declines if
             the surface is cleaned with a glow discharge. After exposure to open air, initial
             γ  is close to 0.1.
              e
                         −7
                At γ  ≤ 10  , stimulated gas emission is insignificant compared with the
                   e
                                            −4
             wall sputtering. However, at γ  ≥  10  , radiation losses from oxygen atoms
                                     e
             prevail in plasma. This highlights the importance of an adequate selection of
             the structural material, its production process and methods for its surface con-
             ditioning as part of the MFR vacuum chamber manufacturing and operation
             process.
             6.4  PLASMA IMPURITY CONTROL
             6.4.1  Sources of Impurities
             The sources of impurities in hydrogen plasma include the following:
             l  He synthesis,
             l  gas emission from vacuum chamber structural and functional materials,
             l  impurities contained in a fuel mixture,
             l  impurities delivered to the chamber from reactor systems via the shared
                vacuum pumping duct (e.g. neutral beam injectors, diagnostics equipment,
                etc.),
             l  uncontrolled leaks in in-vessel components’ cooling channels), and
             l  plasma’s corpuscular and electromagnetic radiation impacting the FW.
                Under stationary operating conditions, the balance of synthesised α-particles
             and He atoms pumped out of the system is described by


                               ( − R1  He )  [n He He ]V  = cn n  <  σν >,                                          1−RHenHeVτHe=cnDnT<σν>,
                                                DT
                                        τ
             where [n ] is the acceptable He concentration in the plasma, R  is the pro-
                                                                  He
                    He
             portion  of  He  atoms  reflected  by  the  wall  and  returned  to  the  plasma  and
             τ  is the α-particle hold time [11]. By setting the [n ] and τ  values, one
                                                                 He
              He
                                                         He
             can measure the return coefficient finite value. For instance, if  n[  He ]  n /  pl  = 0.1               [nHe]/npl=0.1
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