Page 280 - Handbook of Lasers
P. 280

Semiconductor lasers are divided by material type and listed in Tables 1.5.1–1.5.8. The
                         lasers are furthered  grouped  by  the  method  of  excitation  (injection,  optically  pumped,
                         electron beam pumped). Quantum cascade and intersubband lasers are listed in a separate
                         table (Table 1.5.9). Vertical cavity lasers are also listed in a separate table (Table 1.5.10).
                         The tables include the lasing material, wavelength, structure, operating mode, temperature,
                         and primary references. For lasers that have been tuned over a range of wavelengths, the
                         tuning range given is that for the configuration and conditions used and may not represent
                         the extremes possible. The lasing wavelength and output of semiconductor lasers depend on
                         the  chemical  composition  of  the  material,  structural  configuration,  optical  cavity,
                         temperature, excitation rate, and other operating conditions. The original references should
                         therefore be consulted for this information and its effect on the laser performance.

                            Because it is possible to vary the constituent elements and tailor the laser emission, the
                         wavelength of semiconductor lasers is a less fundamental  property  than  for  other  lasers
                         involving transitions between specific atomic levels. Thus the tabulations generally include
                         early  pioneering  papers  and  representative  examples  of  different  structures,  preparation
                         methods, and operating conditions rather than an exhaustive listing of all reported lasers.

                            The wavelength ranges of various types of semiconductor lasers are shown in Figure
                         1.5.2. The wavelength of quantum cascade lasers, unlike that of diode lasers, is determined
                         by the active layer thickness rather than the band gap of the material. Multiple quantum well
                         cascade lasers have been tailored to operate in the range ~3-17 mm, thereby extending the
                         range of III-V compound lasers.

                            Only inorganic semiconducting materials are listed in this section. Dye-doped organic
                         semiconductor lasers are included in Section 1.3; semiconducting polymer lasers are covered
                         in Section 1.6. Commercial lasers are covered in Section 1.5.12.



                                         Nitrides
                                              II-VI Compounds

                                                                        III-V Compounds


                                                              III-V Antimonides
                                                               Mercury II-VI Compounds
                                    IV-VI Lead Compounds

                                                                Ge Intervalence Band




                                   0.3                 3.0                                   300
                          0.1                1.0                 10       30        100
                                                         Wavelength ( mm)

                         Figure 1.5.2  Reported ranges of output wavelengths of various types of semiconductor lasers.
                         Quantum cascade lasers are included among the III-V compound lasers.











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