Page 282 - Handbook of Lasers

See, also, Far Infrared Semiconductor Lasers, special edition of the Journal of Optical and
Quantum Electronic 23 (1991); Special Issue on Semiconductor Lasers, IEEE Journal
of Quantum Electronics, (June 1993); Semiconductor Lasers, Selected Topics in
Quantum Electronics 1 (June 1995); and Semiconductor Lasers, Selected Topics in
Quantum Electronics 3 (April 1997).

MRS Internet Journal of Nitride Semiconductor Research (www.mrs.org)

Tables in this section are presented in the following order:

Type Table
II-VI Compound Lasers 1.5.1
Mercury II-VI Compound Lasers 1.5.2
III-V Compound Lasers 1.5.3
III-V Compound Antimonide Lasers 1.5.4
Nitride Lasers 1.5.5
Lead IV-VI Compound Lasers 1.5.6
Germanium-Silicon Intervalence Band Lasers 1.5.7
Other Semiconductor Lasers 1.5.8
Quantum Cascade and Intersubband Lasers 1.5.9
Vertical Cavity Lasers 1.5.10

Abbreviations used to describe the laser structures and laser operation:
ADQW—asymmetric dual quantum well QB—quantum box
BGSL—broken-gap superlattice QC—quantum cascade
BH—buried heterostructure qcw—quasi-continuous wave
BW—broad-waveguide QD—quantum dot
CMC—coupled microcavity QW—quantum well
cw—continuous wave RW—ridge waveguide
DBR—distributed Bragg reflector SB-BGSL — strain-balanced BGSL
DFB—distributed feedback SCBH—separate confinement buried H
DH—double heterostructure SCH—separate confinement heterostructure
DQW—double quantum well SL-MQW—strained-layer MQW
GRIN—graded index SLS—strained-layer superlattice
H—heterostructure SL—superlattice
J—p-n junction SQW—single quantum well
MC—microcavity or microcylinder SSQW—strained SQW
MD—microdisk T2QWL — type II quantum well laser
ML—monolayer or microlaser VCSEL—vertical cavity surface emitting laser
MQW—multiple quantum well VC—vertical cavity
p—pulsed "W"—W (conduction band profile) active region

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