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1.5.4 III-V Compound Lasers
Additional III-V compound lasers are included in the Section 1.5.10 on interband, inter-
subband, and cascade lasers (see Table 1.5.9). Antimonide III-V compound lasers are
tabulated separately in Table 1.5.4.
Table 1.5.3
III-V Compound Lasers
Wavelength Temp.
Material ( m) Structure Mode (K) Ref.
Injection Lasers
AlGaAs 0.680-0.700 DH cw 300 84
AlGaAs 0.688–0.729 H p, cw 100 88
AlGaAs 0.750 H p 77, 273 99
AlGaAs 0.844–0.852 H p 77, 300 123
AlGaAs 0.845 H cw 100 88
AlGaAs/GaAs 0.674–0.681 SL QW RW cw 300 83
AlGaAs/GaAs 0.750–0.855 GRINSCH SQW cw 300 100
AlGaAs/InGaP 0.615 H cw 300 71
AlGaAsP ~0.800–0.845 DH p 77–300 109
AlGaInAs/AlInAs 1.008 DH p 300 143
AlGaInP 0.5836 DH cw 77 62
AlGaInP 0.621 mesa stripe cw 273 72
AlGaInP/AlGaInP 0.6262 DH p 300 74
AlGaInP 0.640 H cw 293 79
AlGaInP/GaInP/AlGaInP 0.6897 DH cw 300 89
GaAlAs/GaAs 0.843–0.8562 SH cw 77 122
GaAs 0.69–0.79 SL QW cw 300 83
GaAs 0.825 SQW cw 300 83
GaAs 0.837–0.843 H p 4.2, 77 114
GaAs 0.842 J p 77 120
GaAs 0.843 H p 77 121
GaAs 0.87 DH cw 300 83
GaAs/AlGaAs ~0.765–0.855 ADQW p, cw 300 385
GaAs/AlGaAs 0.7812 DH p 77 105
GaAs/AlGaAs 0.8404 SCH cw 300 94
GaAs/GaAlAs 0.680–0.785 SL SQW GRIN. p, cw 300 85,86
GaAs/GaAlAs 0.848 SH DFB p 77 298
GaAsP 0.710 J p 77 98
GaAsP/InGaP 0.7010 H cw 283 95
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