Page 291 - Handbook of Lasers

Table 1.5.4— continued
III-V Compound Antimonide Lasers
Wavelength Temp.
Material ( m) Structure Mode (K) Ref.
InAs/GaSb/InAs/AlSb 2.9 Type II "W" p £280 306
InAsSbP/InAs 3.9 DH p 77–125 184
InAsSb/InAsP 3.57–3.86 SLS p 80–240 191
InAsSb 3.7 DH qcw 77 307

Electron Beam Pumped Lasers
AlGaSb 1.10–1.60 crystal p 83 147

1.5.6 Nitride Lasers

Table 1.5.5
Nitride Lasers
Wavelength Temp.
Material ( m) Structure Mode (K) Ref.

Injection Lasers
InGaN 0.376 SQW SCH p 300 199
InGaN 0.399–0.402 MQW p, cw 300 291
InGaN 0.40583 MQW cw 300 20
InGaN 0.407–0.411 MQW p 300 297
InGaN 0.417 MQW p 300 22
InGaN 0.419 MQW p 300 44

Optically Pumped Lasers

AlGaN/GaInN 0.389–0.399 DFB DH p 300 295
AlGaN/GaInN 0.4025 DH p 300 19
GaN ~0.356 SCH QD p 20 4
GaN 0.359 crystal p 2 5
GaN 0.362–0.381 crystal p 10–375 7
GaN 0.3696 layer p 300 10
GaN 0.376–0.378 layer VC p 300 13,14
GaN 0.378 film p 300 15
GaN 0.378 MD WGM p 300 387
GaN ~0.385 ML p 300 293
GaN 0.364–0.386 layer p 77–450 334
GaN — powder p 300 352
GaN/AlGaN ~0.3615 SCH p 300 6

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