Page 287 - Handbook of Lasers
P. 287

Table 1.5.3— continued
                                                 III-V Compound Lasers
                                                 Wavelength                           Temp.
                                Material            ( m)         Structure     Mode    (K)    Ref
                                                                                                 .
                         GaInP/AlInP             0.576–0.584    MQW             p     109–165    60
                         GaInP/AlInP             0.607          SSQW DFB        p     140        70
                         GaInP/GaAlInP           0.627–0.640    SQW GRINSCH     p     300        75
                         GalnP/AlGaInP           0.671          DH              cw    293        82
                         GaSb                    1.55–1.60      J               p     78        141
                         GaSb                    1.57           J               p     77        156
                         In(Al,GaP              ~0.640          MQW H           cw    300        80
                         InAlAs                  0.707          QD H            cw    77         97
                         InAs                    0.982–0.992    GRINSCH QB      cw    79        139
                         InAs                    1.05–1.24      QW QD  (a)      p     295       375
                         InAs                    3.112          J               p     4, 77     185
                         InAs/GaAs               1.00–1.05      SCH QD          cw    100–300   142
                         InAs/GaSb/GaInSb/GaSb   2.9            type-II "W" SL  p, cw  £260     299
                         InAs/GaInSb             3.1            MQW             p     190       172
                         InAs/GaInSb/InAs/       2.7            SB-BGSL         p     180       279
                            AlGaInAsSb
                         InGa/GaAs               1.074          SL QW BH        p     300       144
                         InGaAlP                 0.625          MQW             cw    300        73
                         InGaAlP                 0.63–0.65      H               cw    295–323    76
                         InGaAlP                 0.6378         SBR             cw    298        78
                         InGaAs                  0.911          QD              p      80       130
                         InGaAs                  0.979          SQW             cw    300       137
                         InGaAs                  1.77, 2.07     J               cw    1.9       160
                         InGaAsPN                1.2–1.3        SQW             p     300       373
                         InGaAs/AlGaAs           0.956, 0.985   SCH (b)         p     300       382
                         InGaAs/AlGaAs          ~0.955          SQW SCH         cw    300       374
                         InGaAs/GaAs             0.99           SL QW           cw    300       140
                         InGaAs/GaAs             1.028          SL SCH QD       cw    300       146
                         InGaAs/GaAs             1.14, 1.19     QD              cw    80–250    341
                         InGaAs/GaAs/InGaP      ~0.978–0.984    RW QW           cw    300       136
                         InGaAs/GaAs/InGaP       0.99           SCH QW          qcw   278–288   343
                         InGaAs/GaInAsP          1.5            SL-MQW          cw    283–373    47
                         InGaAs/GaInAsP/GaInP    0.981–0.985    SCH QW          cw    300       348
                         InGaAs/InGaAs           2.051–2.056    MQW DFB         cw    298       358
                         InGaAs/InP              1.440–1.640    MQW GRINSCH     cw    300       15l
                         InGaAs/InP              1.62           SQW GRINSCH     cw    300       159







                         ©2001 CRC Press LLC
   282   283   284   285   286   287   288   289   290   291   292