Page 289 - Handbook of Lasers

Table 1.5.3— continued
III-V Compound Lasers
Wavelength Temp.
Material ( m) Structure Mode (K) Ref.
InAs/InAsSb 3.3–3.4 type-II SL cw 95 188
InAs/InAsSbP 3.1 DH p 77–100 184
InAs/InAsSbP 3.1 DH p 77–100 304
InGaAs 0.935 crystal p 300 131
InGaAs/InAlAs 1.5–1.6 MQW p 300 152
InGaAsP (c) 1.504 QW MC p 143 356
InGaP 0.695 crystal p 77 91
InP 0.850 crystal p 77 126
InP 0.915 crystal p 300 131
InPAs 1.602 crystal p 77 158
InSb 5.16–5.32 crystal cw (d) 20 201
InSb 5.258 crystal p 4 312
InGaAs/GaAs 0.918–0.966, QW CMC qcw 300 302
0.940–0.978
InAs/GaAs 0.838–0.886 ML cw 10 303
InAs/GaSb/InAs/AlSb 2.9 Type II p £280 304

Electron Beam Pumped Lasers
AlGaAs 0.696–0.760 layer p 81 92
GaAs ~0.84 crystal p 4 115–
117
GaAsP 0.704 crystal p 77 96
GaSb 1.51–1.53 crystal p 4, 20 153
InAs 2.7–3.2 film p 80–220 168
InGaP 0.549–0.562 crystal p 10–150 57

(a) DWELL (dots in a well) design.
(b) Bipolar cascade laser.
(c) Photonic crystal.
(d) Two-photon (9.3 mm) pumped.

©2001 CRC Press LLC