Page 292 - Handbook of Lasers

Table 1.5.5— continued
Nitride Lasers
Wavelength Temp.
Material ( m) Structure Mode (K) Ref.
GaN/AlGaN 0.3635 VCSEL p 300 8
GaN/AlGaN 0.387 H p 34 294
GaN/AlGaN ~0.359, ~0.365 DH p 77, 295 243
GaN (a) 0.378–0.380 (b) film p 1.8 335
GaN (a) — (b) film p 300 336
InGaN 0.406 ML VC p 300 296
InGaN/GaN ~0.341 MQW p 10 337
InGaN/GaN 0.385 MQW p < 220 17
InGaN/GaN 0.415 VC p 300 21
InGaN/GaN 0.427–0.437 MQW p 175–575 50
InGaN/GaN/AlGaN` 0.401 VCSEL p 300 384
InGaN/InGaN 0.410 MQW p 300 292
InGaNAs/GaInP 1.17–1.26 DH p 300 178,282

(a) Cubic gallium nitride.
(b) Gain was measured.

Section 1.5.7 Lead IV-VI Compound Lasers

Table 1.5.6
Lead IV-VI Compound Lasers
Wavelength Temp.
Material ( m) Structure Mode (K) Ref.

Injection Lasers
PbCdS 3.5 J cw 10–20 190
PbEuSe/PbSe/PbEuSe 5.55–7.81 BH p, cw 30–160 223
PbEuSeTe 2.7–6.6 DH cw < 147 170
PbEuSeTe 2.6–6.6 DH p < 190 193
PbEuSeTe 3.8–6.6 DH cw < 147 193
PbEuSeTe/PbTe 4.19–6.49 SCBH cw 215–20 280,281
PbEuSeTe/PbTe 4.2–6.4 BH cw 90–203 204
PbEuSeTe/PbTe 3.97 SQW p 260 170,200
PbEuSeTe/PbTe 4.41–6.45 SQW cw 174–13 170,200
PbEuSeTe/PbTe 4.5362–5.7026 DH BH cw 120–180 211
PbEuTe 3.4–6.5 DH p > 200 189
PbGeTe 4.40–6.50 J cw 4 209
PbS 4.32 J cw 4.2 207,208

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