Page 297 - Handbook of Lasers

1.5.11 Vertical Cavity Lasers
The light output of vertical-cavity surface-emitting lasers (VCSELs), in contrast to edge-
emitting diode lasers, is normal to the axis of the gain medium. The lasing wavelength is
determined by the equivalent laser cavity thickness which can be varied by changing the
thickness of either the wavelength spacer or the distributed Bragg reflector layers.

Table 1.5.10
Vertical Cavity Lasers
Wavelength Temp.
Material ( m) Structure Mode (K) Ref.

Injection Lasers
AlGaAs 0.770 SL cw 300 104
AlGaInAs/AlGaAs ~0.850 SL-MQW cw 230–410 320
AlGaInAs 1.3 MQW cw 300 149
AlGaInP/AlGaAs 0.670–0.690 QW cw 300 81
GaAs 0.845 crystal cw 300 125
GaAs ~0.900–0.962 layer cw 300 127
InAlGaAs 0.9604 QD cw 300 134
InGaAs 0.951–0.957 QW cw 95–175 378
InGaAs 0.969, 0.986 MQW cw 300 326
InGaAs 0.979 SQW cw 300 327
InAsAs 0.958 MQW p 300 322

InGaAs 0.9191–0.9507 MQW p, cw 300 325
InGaAs/GaAs ~0.943–0.971 MQW cw 300 328
InGaAs/GaAs 0.940–0.983 (a) SQW p, cw 300 329
InGaAsP 1.542 QW p, cw 300 381
InGaAsP 1.55 QW p 300 155
InGaAsP 1.3 DH p 300 331
InGaAsP 1.3 — cw 273–343 379
InGaAsP/InP 1.18 DH p 77 332
InGaN 0.381 3l cavity p 77 346
InGaN 0.399 MQW p 300 347
InSb ~5.2 J p ~10 333

Optically Pumped Lasers
InGaAs/GaAs 0.918–0.966 QW CMC qcw 300 330
0.940–0.978
InAs/GaSb/InAs/AlSb 2.9 type II "W" cw 78–160 324
CdHgTe/HgTe 3.06 DH p 10–30 321
InAs/GaSb/InAs/AlSb 2.9 type II "W" p £280 323

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