Page 299 - Handbook of Lasers

1.5.12 Commercial Semiconductor Lasers
Diode lasers are available in a wide range of power levels and operating configurations
according to the type of device and application; packing may include thermal control and
fiber coupling. For the highest powers, diode laser arrays (bars) are stacked.

Table 1.5.11
Commercial Semiconductor Lasers
Principal
Laser Material Operation wavelengths ( m) Output
InGaN cw 0.400 5 mW

GaN pulsed 0.415 20 nJ

GaAlAs cw 0.42, 0.43 (SH) 0.4–4.0 W
InGaAlP cw [0.63–0.68] 1–500 mW
pulsed 0.68 £ 10 J
GaAsP cw 0.67 1–10 mW
pulsed 0.67 3–10 J

GaAlAs cw [0.75–0.85] 1–200 mW
pulsed [0.75–0.85] 1–500 mJ
GaAlAs (arrays) cw [0.75–0.85] 10 W–60 W
pulsed [0.78–0.91] 0.1–30 J
GaAlAs (stacked arrays) qcw, cw [0.79–0.98] £ 3 kW

GaAs pulsed 0.904 £ 0.8 J
GaAs (arrays) pulsed 0.904 £ 5 J

InGaAs cw 0.905–0.98 0.02–1.0 W
-6
pulsed 0.905–0.98 10 –1.0 J
InGaAs (arrays) cw 0.91–0.98 30 W

InGaAsP cw 1.27–1.33 0.1–3.0 W
cw 1.52–1.58 0.5–100 mW
cw 1.57–1.63 >2 mW
pulsed 1.06–1.55 0.2 mJ
pulsed 1.55 10 –0.6 J
-3
InGaAsP (arrays) pulsed 1.55 2.5 J
Pb salts cw 3.3–27 0.1–25 mW
pulsed 3.3–25 £ 2 J
Pb salts (77 K) cw 2.9–3.6 1–5 mW

SH – second harmonic

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