Page 293 - Handbook of Lasers

Table 1.5.6— continued
Lead IV-VI Compound Lasers
Wavelength Temp.
Material ( m) Structure Mode (K) Ref.
PbSSe 6.1 SH, DH cw 12 230
PbSe 8.5 J p 4 240
PbSe/PbEuSe 2.88 DH cw 100 175
PbSe/PbEuSe 5.7–7.8 DH p, cw 220, 174 175
PbSe/PbSrSe 4.4–8.0 H p, cw 290, 169 210
PbSnSe 10.2 J p, cw 77 241
PbSnTe 6 MQW p, cw 204, 130 229
PbSnTe 9.4, 12.7, 13.7 J p, cw 12 241
PbSnTe/PbTeSe 5.90–8.55 MQW p, cw ~10–204 228
PbSnTe 12.8 DH p 77–188 189
PbSnTe/PbEuSeTe 4.77–7.18 BHG cw 20–175 213
PbSnTe/PbTe 8.2–18.5 H cw 12–80 225,236
PbSnTe/PbTeSe ~9 BH cw 80 239
PbSrS/PbS 2.79–3.44 MQW p 255–90 179
PbSrS/PbS 2.95–3.84 DH p 250–90 179
PbSrS/PbS 2.97 DH p, cw 245, 174 179
PbSrS/PbSrS 2.77–3.14 DH p 180–90 179
PbSrSe/PbSePbSrSe 4.78 DH p 300–333 345
PbTe 6.5 crystal p 12 232

Optically Pumped Lasers

PbSSe 3.9–8.6 crystal p (a) 2 18

Electron Beam Pumped Lasers
PbS ~4.3 crystal p 4.2 206
PbSe 8.5 crystal p 4.2 206
PbTe 6.41 crystal p 4.2 206

(a) Optically pumped using a Nd:YAG laser (1.064 mm).

Section 1.5.8 Germanium-Silicon Intervalence Band Lasers

Table 1.5.7
Germanium-Silicon Intervalence Band Lasers
Wavelength Temp.
(a)
Material ( m) Structure Excitation (K) Ref.
Ge(Be),Ge(Zn) 75–250 crystal elect./mag. fields (p) 4.2 224, 226
Ge(Cu) 80–150 crystal elect./mag. fields (p) 4.2 224, 226–7
Ge(Ga) 110–360 crystal elect./mag. fields (p) 4.2 259–261
Ge(Ga) »86 crystal electric field (p,cw) 4–8 389

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