Page 288 - Handbook of Lasers

Table 1.5.3— continued
III-V Compound Lasers
Wavelength Temp.
Material ( m) Structure Mode (K) Ref.
InGaAsP/GaAs 0.808 SQW cw 300 110
InGaAsP/InaP (c) 1.281 SCH MQW p 300 357
InGaAsP/InGaP 0.83 QW H cw 300 112
InGaAsP/In(Ga,Al)P 0.735 SQW cw 288 300
InGaAsP/In(Ga,Al)P 0.81 QW cw 293 301
InGaAsP/InP 1.27 DH p 300 148
InGaAsP/InP 1.31 BH p 30 150
InGaP 0.761, 0.763 J p 4.2, 77 101
InGaP/InP 1.43 BW SCH MQW cw, qcw ~300 344
InGaP:N 0.5520 crystal cw 77 58
InGaPAs/GaAs ~0.785 H cw 300 108
InP 0.906–0.908 crystal p 4, 77 128,129
InSb 5.085–5.28 J p 10 215

Optically Pumped Lasers
AlGaAs/AlGaAs ~0.636 H p 300 77
GaAs 0.83 crystal p 300 111
GaAs 0.8365 crystal p 77 113
GaAs/AlGaAs ~12.5 QW p 77 244
GaAs/InAs ~0.84–0.86 SCH SSQW p, cw 77 118
GaSb 1.541 crystal p 4 154
In(Al,Ga)P ~0.640 MQW H cw 300 80
InAs 2.94 crystal p 20 154
InAs ~3.0 crystal p 4 180
InAs/GaSb/InAs/AlSb 3.08–4.03 type "W" p 100–360 349
InAs/GaSb/InAs/AlSb 2.72–3.55 type "W" cw 78, 290 350
InAs/GaInSb/InAs/AlSb 5.4–7.4 type-II "W" p 77–290 386
InAs/GaSb/InAs/AlSb 3.1–3.4 type-II "W" p 300 377
InAs/GaInSb/InAs/AlAsSb 3.14–3.02 type "W" cw 78, 275 350
InAs/GaInSb/InAs/AlSb 3.59–6.07 type-II "W" cw 78–265 376
InAs/GaInSb/InAs/AlSb 5.4–7.1 type "W" cw 78–265 350
InAs/GaInSb/InAs/ 3.7, 5.2 SB-BGSL p 300 279
AlGaInAsSb
InAs/GaInSb/InAs/AlSb 3.2, 3.4 T2QWL p 350, 310 285
InAs/GaInSb/InAs/AlSb 3.4 T2QWL p 310 285
InAs/GaInSb/InAs/AlSb 3.9–4.1 T2QWL p 80–285 198
InAs/GaInSb/InAs/AlSb 4.2–4.5 T2QWL p 100–310 203

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