Page 290 - Handbook of Lasers

1.5.5 III-V Compound Antimonide Lasers

Table 1.5.4
III-V Compound Antimonide Lasers
Wavelength Temp.
Material ( m) Structure Mode (K) Ref.

Injection Lasers
GaInAsSb/GaSb ~2.0 DH cw 80 161
InAsSb/InAsSbP 3.6 DH cw 77–100 296
InAsSb(P)/InAsSbP 2.7–3.9 DH cw 80 196
InGaAsSb/AlGaAsSb 2.7 MQW cw 170–234 283
InGaAsSb/AlGaAsSb 2.0–2.65 SCH QW cw 300
GaAsSb/AlGaAsSb 0.980 DH p 300 138
GaInSb/InAs 2.8 MQW BGSL p 225 172
GaInSb/InAs 3.1, 3.2 MQW p 220, 255 172
GaInSb/InAs 3.28–3.90 MQW p 170–84 187
GaInSb/InAs 3.4,–4.3 MQW p 195–110 172
InAlSb/InSb 5.1 H p < 90 214
InAsSb ~3.17 crystal p 77 186
InAsSb 3.5–3.6 MQW DH p 77–135 287
InAsSb ~3.6 layer p 77 184
InAsSb/InAs 3.8–3.9 MQW H p 210 195
InGaAsSb/AlGaSb 2.023, 2.2 DH p 140, 300 162
InGaAsSb/InPSb 3.06 DH p 35 181
GaInAsSb/AlGaAsSb 2.1 DH p, cw 300, 190 163
GaInAsSb/AlGaAsSb 2.02, 2.04 QW p, cw 300 342
GaInAsSb/AlGaSb ~2.2 DH p, cw 303 165
InAsSb/AlAsSb 3.97–3.985 DH p, cw 155, 80 202
InAsSb/InAlAsSb 3.9 SQW p, cw 165, 123 197
InAsSb/InAlAsSb 3.2–3.55 MQW p, cw 225, 175 305
InAsSbP/InAsSb/InAs ~3.2 DH p, cw 220, 77 288
InAsSbP/InGaAsSb 3.05–3.55 DH p, cw 77 182
InGaAsSb 3.23 DH p, cw 77 182
AlGaAsSb/InGaAsSb 2 SQW qcw 283–288 289

Optically Pumped Lasers

GaInAsSb/GaSb 3.08–3.30 DH p 82–210 284
InAsSb/GaSb 3.86–3.97 DH p 80–150 284
InAsSb/InAs ~3.6 J p 77 186
AlGaSb/InAsSb/AlGaSb 3.9 DH p 80–135 12

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