Page 319 - Handbook of Lasers
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372. Muravjov, A. V., Withers, S. H., Strijbos, R. C. et al., Actively mode-locked p-Ge laser in
Faraday configuration, Appl. Phys. Lett. 75, 2882 (1999).
373. Gokhale, M. R., Wei, J., Studenkov, P. V., Wang, H., and Forrest, S. R., High-performance
long-wavelength (l ~ 1.3 mm) InGaAsPN quantum-well lasers, IEEE Photon. Techn. Lett.
11, 952 (1999).
374. Höfling, E., Schafer, F., Reithmaier, J. P., and Forchel, A., Edge-emitting GaInAs-AlGaAs
microlasers, IEEE Photon. Techn. Lett. 11, 943 (1999).
375. Lester, L. F., Stintz, A., Li, H., Newell, T. C., Pease, E. A., Fuchs, B. A., and Malloy, K. J.,
Optical characteristics of 1.24-mm InAs quantum-dot laser diodes, IEEE Photon. Techn.
Lett. 11, 931 (1995).
376. Felix, C. L., Bewley, W. W., Olafsen, L. J. et al., Continuous-wave type-II "W" lasers
emitting at l = 5.4–7.1 mm, IEEE Photon. Techn. Lett. 11, 964 (1999).
377. Felix, C. L., Bewley, W. W., Vurgaftman, I. et al., High-efficiency midinfrared "W" laser with
optical pumping injection cavity, Appl. Phys. Lett. 75, 2876 (1999).
378. Schmid, W., Wiedenmann, D., Grabherr, M., Jäger, R., Michalzik, R., and Ebeling, K. J., CW
operation of a diode cascade InGaAs quantum well VCSEL, Electron. Lett. 34, 553 (1998).
379. Jayaraman, V., Geske, J. C., MacDougal, M. H., Peters, F. H., Lowes, T. D., and Char, T. T.,
Uniform threshold current, continuous-wave, singlemode 1300 nm vertical cavity lasers
from 0 to 70ºC, Electron. Lett. 34, 1405 (1998).
380. Taniguchi, S., Hino, T., Itoh, S., Nakano, K., Nakayama, N., Ishibashi, A., and Ikeda, M.,
100h II-VI blue-green laser diode, Electron. Lett. 32, 552 (1996).
381. Babic´, D. I., Streubel, K., Mirin, R. P. et al., Room-temperature continuous-wave operation
of 1.54-mm vertical-cavity laser, IEEE Photon. Techn. Lett. 7, 1225 (1995).
382. Garcia, J. Ch., Rosencher, E., Collot, Ph., Laurent, N., Guyaux, J. L., Vinter, B., and Nagle, J.,
Epitaxially stacked lasers with Esaki junction: a bipolar cascade laser, Appl. Phys. Lett.
71, 3752 (1997).
383. Painter, O., Lee, R. K., Scherer, A., Yariv, A., O'Brien, J. D., Dapkus, P. D., and Kim, I. T.,
Room temperature photonic crystal defect lasers at near-infrared wavelengths in InGaAsP,
J. Lightwave Technol. (1999).
384. Krestnikov, I. L., Lundin, W. V., Sakharov, A. V. et al., Room-temperature photopumped
InGaN/GaN/AlGaN vertical-cavity surface-emitting laser, Appl. Phys. Lett. 75, 1192
(1999).
385. Lin, C.-F., Lee, B.-L., and Chen, M.-J., Broadly tunable semiconductor lasers using
asymmetric dual quantum wells, Opt. Commun. 171, 271 (1999).
386. Stokes, D. W., Olafsen., L. J., Bewley, W. W. et al., Type-II quantum well “W” lasers
emitting at l=5.4–7.3 mm, J. Appl. Phys. 86, 4729 (1999).
387. Chang, S., Rex, N. B., Chang, R. K., Chong, G., and Guido, L. J., Stimulated emission and
lasing in whispering-gallery modes of GaN microdisk cavities, Appl. Phys. Lett. 75, 166
(1999).
388. Chang, J. H., Cho, M. W., Godo, K. et al., Low-threshold optically pumped lasing at 444
nm at room temperature with high characteristic temperature from Be-chalcogenide-based
single-quantum-well laser structures, Appl. Phys. Lett. 75, 894 (1999).
389. Altukhov, I. V., Kagan, M. S., Gousev, Yu. P. et al., Continuous stimulated terahertz
emission due to intra-center population inversion in uniaxially strained germanium,
Physica B, 272, 458 (1999).
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