Page 334 - High Power Laser Handbook
P. 334

302   So l i d - S t at e   La s e r s         Ultrafast Solid-State Lasers    303


                                               4(w   L )
                                                n
                                           −1
                                          f Kerr  =  2  0  m  P            (12.2)
                                                  π w 4
                         Here L  is the material length, w is the beam radius, and P is the
                               m
                      beam power. From this expression for a typical Ti:sapphire oscillator,
                      we get a focal length of ~1 m.

                      12.2.2  Ultrafast Oscillators
                      A typical ultrafast oscillator has some distinguishing characteristics.
                      First,  it  needs  a  pump  source,  whether  diodes  or  another  laser.
                      Second,  it  needs  some  form  of  dispersion  compensation—either
                                                                              12
                      prisms, chirped mirrors, or both, depending on the desired result.
                      Finally, some sort of starting mechanism, such as a shock (prism jog
                      is typical), to induce an intensity modulation to start the Kerr effect,
                      or a SESAM, which induces lower loss for a given intensity. Figure 12.1
                      shows a standard Ti:sapphire laser. Note that if the cavity is set just
                      right, self-mode locking can occur.
                         Many other femtosecond lasers have since been developed and
                      are widely used today. Table 12.1 gives a sampling of available femto-
                      second laser sources. These sources can cover a wide range of pulse
                      durations, from less than 10 fs to 1 ps. An advantage of some of these
                      ultrafast  laser  sources  is  their  ability  to  be  directly  laser  diode
                      pumped, which can reduce cost and complexity. Ti:sapphire, which
                      has the potential for the shortest pulses, still must be pumped by
                      complex  intracavity-doubled  Nd:YVO  (neodymium-doped  yttrium
                      orthovanadate)  lasers.  Although  new  laser  diodes  in  the  4XXnm
                      regime, and potentially in the 5XXnm regime, may help this problem,
                      this  technology  has  a  long  way  to  go  to  reach  usable  powers  of
                      around 1 to 5 W at 532 nm.  New optically pumped semiconductor
                                             13



















                      Figure 12.1  Diagram of a standard Ti:sapphire oscillator with prisms used
                      for phase compensation.
   329   330   331   332   333   334   335   336   337   338   339