Page 205 - Inorganic Mass Spectrometry - Fundamentals and Applications
P. 205

Secondary  Ian   Mass S~ectramet~                             191

              The most  satisfactory  results for SIMS quanti~cation have  been  achieved
          through  the  use of relative  sensitivity  factors  (RSFs). In its simplest form, RSFs
          are  determined by  measuring  ion  collection  efficiencies  from  known  matrices  and
          recording  them  as  a ratio to a  reference  element  that is usually  the  most  abundant
          metallic  atom  in the matrix. A matrix  that  matches  the  unknown is necessary. If a
          good  matrix  match is available,  excellent  results  can be achieved”especial1y  in  the
          dilute concentration  range.  A relative se~sitivi~~actor (RSF) may  be  defined  as






          where S,,  is the RSF for element i with  respect to the matrix  element m;  Cj and
          Cm are  the  atomic  concentrations of impurity  element i and  matrix  element m, re-
          spectively;  and the isotopes  measured  are  j  for element i and y1 for element m. If
                                                         of
          relative  sensitivity  factors for all the  elements  in  an  unknown similar  matrix  have
          been  determined,  then the concentration of each element x in the unknown  may  be
          calculated from







              If only  some of the  elements are of concern  and the concentration of the  ma-
          trix  element is known  or  can  be  reasonably  estimated,  then  Eq.  (4.5)  can  be  used
          to  solve for each  unknown.
              The method of defining  RSFs described is traditional  in  analytical  chemistry,
          generates  RSFs  without  units,  results  in  larger  numbers elements for which  the
                                                      for
          SIMS inst~ment is more  sensitive,  and is essentially the same  as  Wittmaack’s  pro-
          posed  use of “scaled  sensitivity  ratios”  [ 1001. However,  an  alternative de~nition of
          sensitivity  factors  that  has  gained  much  popularity  with  semiconductor  specialists
          is that of Wilson  [69,101]:
               pi = (I~I,) RSF                                         (4.7)
          where pi is the impurity  atom  density  in  atoms  per  cubic  centimeter  (atomslcm3)
          and  the  other  symbols  are  as  described.  For  practical  use  with  nonmonoisotopic
          elements, the ion  intensities  need  to be corrected for isotopic  abundance,  and  the
          equation  becomes




          With  this  definition,  RSF has  units of atoms  per  cubic  centimeter,  and  an  element
                                                                       RSF.
          that is detected  with  more  sensitivity  in  the  SIMS  instrument  has  a  smaller
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