Page 331 - Sami Franssila Introduction to Microfabrication
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310 Introduction to Microfabrication



                    Table 30.1 Granularity of processing  so on. Some of the most important ones are briefly
                                                         discussed below.
            Single-feature processing
            Direct writing for research and pilot production
            Mask making by e-beam or laser beam          30.2.1 Uptime/downtime
            Mask repair, chip repair, chip customization  Uptime is an overall measure of equipment availability.
            Throughputs a few wafers per hour (WPH)
                                                         Uptime is reduced both by scheduled and non-scheduled
            Single-chip processing                       maintenance. Recalibration/test wafers required to set
                                                         the process running after a disruption can contribute
            Reduction steppers and scanners
            Better alignment and resolution              significantly to downtime. Regular reactor cleaning
            Throughputs up to 100 WPH                    is mandatory for deposition equipment. Sometimes
                                                         chamber cleaning is done after every wafer, so that there
            Single-wafer processing                      is no build-up of films on chamber walls (this is plasma
            Easy automation                              cleaning, and not mechanical cleaning which would
            In situ monitoring                           necessitate chamber opening). Uptime is drastically
            Throughputs 10–50 WPH                        lower, but yield is higher. Uptimes vary from almost
            Plasma etching, sputtering, (PE)CVD, medium current  100% for wet benches to 90% for furnaces and plasma
              implantation (MCI)                         etchers, 80% for implanters and to 40% for PECVD.
            Batch processing
            Enormous throughputs: up to 200 WPH          30.2.2 Utilization
            Wet cleaning, oxidation, thermal CVD (oxide, poly,
              nitride)                                   Utilization is a measure of equipment use: actual
                                                         productive hours of all available hours. General-purpose
            Combinations                                 tools such as lithography have high utilization while
            Load multiple wafers but process one wafer at a time  the more dedicated tools have lower utilization. A
              (HCI, CVD)                                 10 million dollar lithography tool must not wait for a
                                                         1 million dollar resist coater, but the resist coater can
                                                         sit idle waiting for a stepper. Rapid thermal processor
            wafers per hour are considered good for direct write  for silicide anneal is used twice during a CMOS process,
            processes. Single-chip processing is done only in  and its utilization is the lowest of all tools, together with
            lithography, using reduction steppers and scanners. They  the dedicated wet bench for selective titanium etching.
            are close to 1X systems in throughputs, with the best
            systems approaching 100 WPH.                 30.2.3 Throughput
              Single-wafer processing benefits from easy process
            development because fewer wafers are needed and batch  How many wafers per hour can the system handle?
            effects are eliminated. Robotic handling from cassette-  Single-wafer tools have throughputs of 25 to 50 WPH,
            to-cassette and in situ monitoring without averaging  but batch tools can handle up to 200 WPH. This is
            over a batch enables a much higher degree of process  very much process-dependent: if the LPCVD polysilicon
                                                                        ◦
            control than in batch systems. There are various  process is run at 635 C, its rate is four times higher than
                                                              ◦
            combination systems, for instance, high-current ion  at 570 C. Similarly, if film thickness to be deposited
            implanters load a batch of wafers on a rotating holder,  is doubled, deposition time is doubled. Throughput,
            but the beam scans one wafer at a time, and the rotation  however, might not change much if the overhead
            of the holder takes care of the batch processing. In  (loading, pump down, temperature ramp, etc.) is high
            epitaxy, single-wafer and batch tools co-exist, but in  relative to deposition time. In etching, throughput can
            plasma etching and sputtering, single-wafer tools are the  be severely reduced even if film thickness remains
            norm in mainstream IC production.            unchanged, but overetch requirement changes due to
                                                         topography (recall page 129).

            30.2 EQUIPMENT FIGURES OF MERIT              30.2.4 Footprint

            Equipment figures of merit include various aspects  How big is it? The cleanroom space is premium priced:
            such as process, capital cost, labour, consumables, and  $10 000 per square metre is the price range for a class 1
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