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32    2 Extremely Short-External-Cavity Laser Diode
                               In this chapter, we deal with LDs closely aligned with a microstructure
                            including a diaphragm, a cantilever and a slider. By closely aligning or inte-
                            grating the microstructure with an LD, which does not require a lens system,
                            new functional and sophisticated microdevices can be developed.
                               In the following, we analyze the ESEC LD by introducing the effective
                            reflectivity of the laser facet facingthe external mirror. Then a measurement
                            method that uses an LD attached to a flyingslider and a semitransparent
                            rotatingdisk mirror for an extremely short-external-cavity configuration is
                            presented. Then as practical applications, a tunable LD, a resonant sensor, an
                            integrated optically switched laser head are introduced from the viewpoint of
                            their composition, principle, basic characteristics, and fabrication methods.



                            2.2 Theoretical Analysis

                            The lasingbehavior for an ESEC LD with a feedback light has not yet been
                            clarified because of the complexity of the many parameters involved [2.9,
                            2.11]. In this section, we analyze the composite resonant phenomena under
                            the stronglight feedback. We first analyze a solitary LD and then an ESEC
                            LD by introducingthe effective reflectivity facet facingthe external mirror.


                            2.2.1 Lasing Condition of a Solitary LD
                            A laser diode (LD) consists of an active region of (n, β, g, α) and two mirrors
                            with the reflectivities R 1 and R 2 separated at the length of L as shown in
                            Fig. 2.1, where n is the refractive index, β is the propagation constant, g
                            is the gain and α is the extinction coefficient. The active region with a pn
                            junction semiconductor is in the state of population inversion in the energy
                            levels. Amongthe photons emitted spontaneously in all directions, only the
                            photons travelingalongthe axis of the resonator (incident to the mirrors


                                                    z = 0          z = L

                                                         (n, b, g, a)
                                                       r 1        r 2


                                                             L


                                                   Mirror 1       Mirror 2
                            Fig. 2.1. A laser diode (LD)consists of an active region of (n, β, g, α)and two
                            mirrors with reflectivities of R 1 and R 2 separated at the length of L,where n is the
                            refractive index, β is the propagation constant, g is the gain and α is the extinction
                            coefficient
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