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Scaling Effects in Organic Transistors and Transistor-Based Chemical Sensors   29

                   The interaction between organic semiconductor and analyte mol-
               ecules is still not completely understood. The adsorbed polar analyte
               could influence the charge transport in the channel by trapping some
               charges and consequently decrease the mobility of other mobile
               charges in channel. However, the major effect of the trapped or other-
               wise immobile charges at the dielectric interface is to induce a shift of
               threshold voltage in the transistor characteristics. For alcohol sens-
               ing, a constant threshold shift was observed at low gate voltages,
               which became a gate voltage-dependent mobility change at high gate
               voltages. It was also observed that a reverse gate bias can facilitate
               the restoration of drain current to near its original value. In many
               experiments, exposure of p-channel organic FETs to alcohols pro-
               duced an initial increase in channel current (presumably the effect of
               dipoles) followed by a decrease (due to trapping). The initial increase
               may be due to dipoles in the polar analyte, inducing more charge in
               the channel.

               1.2.3  Transition of Sensing Response by Organic Transistors
                       from Micron-Scale to Nanoscale
               There have been reports exploring the chemical sensing effects of
               organic and conjugated polymer transistors. 102, 103, 107–109  It has been
               shown that on large-scale devices (L > 1 μm), alkyl chain alcohol ana-
               lytes interact with polythiophene thin films at grain boundaries and
               at the dielectric interface rather than the bulk of the films.  Recently,
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               there have been reports on the role of the side chain in chemical sens-
               ing of polymer/oligomer based field-effect transistors. 109, 111  Other
               articles have delved into the dependence of the sensing effects on the
               channel length–grain size relationship in large-scale organic transis-
               tors. 112, 113  There is also an increasing need to develop sensors with
               very small active areas, not only for lower power requirement, but
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               also for the possibility of higher sensitivity.  However, according to
               our experimental findings and analysis, scaling down the geometry
               of an OFET device is not a simple way, as expected, to enhance the
                                        115
               sensitivity. Liang Wang et al.  first systematically investigated the
               scaling behavior of chemical sensing in OFETs with channel lengths
               ranging from microns to tens of nanometers and found that the sens-
               ing mechanism of where and how analyte molecules affect the electri-
               cal transport in an organic transistor becomes quite different when
               devices scaled from micron-scale to nanoscale dimensions. The main
               reason is that unlike the classic MOSFET with crystalline silicon
               channel, the electrical transport and chemical sensing behaviors of a
               polycrystalline OFET heavily depend on the morphology structure of
               the channel material and the properties of interfaces. For large-scale
               OFET devices, grain boundaries play the dominant role for both elec-
               trical transport and chemical sensing behaviors. For smaller channel
               lengths, the number of grain boundaries within a channel decreases
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