Page 55 - Organic Electronics in Sensors and Biotechnology

32 Chapter One

(a) –20.0n

Drain current (A) –15.0n

–10.0n
0 10 20 30 40 50
Time (s)
(b)
–3.5n
Source-drain current (A) –2.5n
–3.0n

–2.0n

–1.5n
(c)
–60.0n
Side current (A) –40.0n

–20.0n
0 10 20 30 40 50
Time (s)

FIGURE 1.17 The sensing effects of a 7 nm channel P3HT transistors upon
exposure to the saturated 1-pentanol vapor. (a) The sensing response at
V =−20 V and V =−1.5 V, without applying side-guarding electrodes. (b) and
g ds
(c) Sensing responses of currents simultaneously collected at the drain
and side electrodes, respectively, with side-guarding electrodes at the
same potential as the drain to collect spreading current, at V =−20 V and
g
V = V =−1.5 V. (Reprinted from Ref. 130. Copyright 2005, with permission
ds side
from Elsevier.)