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4. NANOMEMS APPLICATIONS: CIRCUITS AND SYSTEMS                179


             introduced by Kane [202], see  Fig. 4-19. In this section  this  example  is
             reexamined.
                                                B B  AC
                                                 AC
                                         B B B
                                       J-G a
                                       J-G a te t
                                       J-G a te s s e s
                                A-G a te s s e s
                                A-G a
                                A-G a te t
                                                            B a rrie e
                                                            B a rri
                                                            B a rrie r r r
                                                            S ilic o o
                                                            S ilic
                                                            S ilic o n n n
                                  e - e - e -  e - e - e -
                                 31 P P P  + Q ubi
                                    + Q ubit t
                                    + Q ubits s s
                                 31
                                 31
             Figure 4-19. Sketch of nuclear spin QC concept. Illustrated are two cells in a one-dimensional
                         31  +
             array containing  P donors and electrons in a Si host wafer, separated by a barrier from
                                         3 −
             metal gates on the surface.  B ac  ~ 10  Tesla, and  ~B  2 Tesla. (After [202].)
             In this scheme the qubits are embodied in the nuclear spins of donor atoms
             located underneath biasing metallic gates in doped silicon structures, and the
             coupling  between qubits is enabled by  the  hyperfine  interaction,  which
             couples electron and nuclear spins. In particular, with the wave function of
             the donor  electron being concentrated  at the nucleus, a large hyperfine
             energy, and thus coupling, between electron and nuclear spins is guaranteed
             which, in turn, may be communicated to  adjacent  qubits  by  the
             extension/overlap of the electron wave functions of the corresponding donor
             electrons.  Modulation of the coupling between  electronic  wave  functions,
             and thus  between qubits, is facilitated by  the charge nature of electrons,
             which  enables their manipulation via applied  electric  fields.  Quantum
             computation,  therefore,  may  be effected by applying voltages through
             biasing  gates located on the wafer surface, in particular, “A gates”, which
             control the resonance frequency of the nuclear spin qubits,  and  “J gates”,
             which control the electron-mediated coupling between neighboring nuclear
             spins. In addition, two other biasing magnetic fields are necessary, namely, a
             global field  B , to enable flipping of the nuclear spin at resonance, and a
                         ac
             local magnetic field, B, to break the two-fold spin degeneracy of germane to
             electrons occupying the lowest  energy-bound state at  the  donor,  which
             manifests itself at low temperatures.
               The detailed physics of the silicon-based nuclear spin quantum computer
             is captured by  the parameters  governing  the magnitude  of  the spin
             interactions, which determines the time required for manipulating qubits and
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