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Industrial Sensors and Contr ol
                                        Temperature-controller                         331
                                                  AIGaAs-LED
                              Transmitter 1
                                                                       Temperature
                                                  InGaAsP                sensor
                              Transmitter 2
                                                   -LED
                              Output                Receiver
                              Display     Signal                  Optical fiber
                                        Processor
                                                          Ge-APD
                          FIGURE 7.3  System confi guration of the optical-fi ber thermometer with GaAs
                          light absorber.

                          of λ  is intensity-modulated by temperature. On the other hand, GaAs
                             s
                          is transparent for the light of λ , which is then utilized as a reference
                                                    r
                          light. After detection by a germanium avalanche photodiode (GeAPD),
                          the temperature-dependent signal λ  is normalized by the reference
                                                         s
                          signal λ  in a microprocessor.
                                 r
                             The performance of the thermometer is summarized in Table 7.1.
                          An accuracy of better than ±2°C is obtained within a range of –20 to
                          +150°C. The principle of operation for this temperature sensor is
                          based on the temperature-dependent direct fluorescent emission from
                          phosphors.

                          7.3.2  Semiconductor Temperature Detector Using
                                  Photoluminescence
                          The sensing element of this semiconductor photoluminescence sensor
                          is a double-heterostructure GaAs epitaxial layer surrounded by two
                          Al  Ga  As layers. When the GaAs absorbs the incoming exciting
                            x   1–x
                          light, the electron-hole pairs are generated in the GaAs layer. The
                          electron-hole pairs combine and reemit the photons with a wavelength
                          determined by temperature. As illustrated in Fig. 7.4, the luminescent
                          wavelength shifts monotonically toward longer wavelengths as the
                          temperature T increases. This is a result of the decrease in the energy
                          gap E  with T. Therefore, analysis of the luminescent spectrum yields
                               g
                          the required temperature information. The double heterostructure of
                          the sensing element provides excellent quantum efficiency for the
                          luminescence because the generated electron-hole pairs are confined
                          between the two potential barriers (Fig. 7.5).
                             The system is configured as shown in Fig. 7.6. The sensing ele-
                          ment is attached to the end of the silica fiber (100-μm core diameter).
                          The excitation light from an LED, with a peak wavelength of about
                          750 nm, is coupled into the fiber and guided to a special GRIN lens
                          mounted to a block of glass. A first optical inference filter IF , located
                                                                            1
                          between the GRIN lens and the glass block, reflects the excitation
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