Page 92 - Troubleshooting Analog Circuits
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More Beta-More  Better?                                           79


                           beta rises, so does h&. As beta rises and h,  rises, the transistor’s output impedance
                           decreases; its Early voltage falls; its voltage gain decreases; and its common-emitter
                           breakdown voltage, BVcE~, may also decrease. (The Early voltage of a transistor is
                           the amount of V,,   that causes the collector current to increase to approximately two
                           times its low-voltage value, assuming a constant base drive. VEarly is approximately
                           equal to 26 mV  X  (l/h&)). So, in many circuits there is a point where higher beta
                           simply makes the gain lower, not higher.
                             Another way to effectively increase “beta” is to use the Darlington connection: but
                           the voltage gain and noise may degrade, the response may get flaky, and the base
                           current may decrease only slightly. When I was a kid engineer, I studied the ways
                           that Tektronix made good use of the tubes and transistors in their mainframes and
                           plug-ins. Those engineers didn’t use many Darlingtons. To this day, I keep learning
                           more and more reasons not to use Darlingtons or cascaded followers. For many years.
                           it’s been more important (in most circuits) to have matched betas than to have sky-
                           high betas. You can match betas yourself, or you can buy monolithic dual matched
                           transistors like the LM394, or you can buy four or five matched transistors on one
                           monolithic substrate, such as an LM3045 or LM3086 monolithic transistor array.
                             One of the nice things about bipolar transistors is that their transconductance, g”,.
                           is quite predictable. At room temperature, g,  = 38.6 X IC (This is much more consis-
                           tent than the forward conductance of diodes, as mentioned in the previous chapter.)
                           Since the voltage gain is defined as Av = g,  X ZL, computing it is often a trivial task.
                           You may have to adjust this simple equation in certain cases. For instance, if you
                           include an emitter-degeneration resistor, Re, the effective transconductance falls to
                           l/(Re + g,-’).  Av is also influenced by temperature changes, bias shifts in the emitter
                           current, hidden impedances in parallel with the load, and the finite output impedance
                           of the transistor. Remember-higher  beta devices can have nzuch worse output
                           impedance than normal.
                             Also be aware that although the transconductance of a well-biassed bipolar tran-
                           sistor is quite predictable, beta usually has a wide range and is not nearly as
                           predictable. So you have to watch out for adverse shifts in performance if the beta
                           gets too low or too high and causes shifts in your operating points and biases.

             Field Effect Transistors

                             For a given operating current, field-effect transistors normally have much poorer
                           g,  than bipolar transistors do. You’ll have to measure your devices to see how much
                           lower. Additionally, the V,,  of FETs can cover a very wide range, thus making them
                           harder to bias than bipolars.
                             JFETs (Junction Field-Effect Transistors) became popular 20 years ago because
                           you could use them to make analog switches with resistances of 30 R and lower.
                           JFETs also help make good op amps with lower input currents than bipolar devices,
                           at least at moderate or cool temperatures. The BiFET’”  process’ made it feasible to
                           make JFETs along with bipolars on a monolithic circuit. It’s true that the character-
                           istic of the best BiFET inputs are still slightly inferior to the best bipolar ones in
                           terms of V,,   temperature coefficient, long-term stability, and voltage noise. But
                           these BiFET characteristics keep improving because of improved processing and
                           innovative circuit design. As a result, BiFETs are quite close to bipolar transistors in
                           terms of voltage accuracy. and offer the advantage of low input currents. at room
                           temperature.


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