Page 297 - Tunable Lasers Handbook
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6 Transition Metal Solid-state Lasers   257

                                            Wavelength (micrometers)
                                               0.80   0.75   0.70
                                      15         I     I      I
                                    N   -
                                     E
                                    Lo   --   Excited-State Absorption
                                    %   I ......  Emission Cross Secrion
                                            Cross Section
                                                               ::.,  ! :
                                     - 10-                 ,,  ..  I 8   ,
                                                            .,-  k  k
                                     X                    ,...   .-:   i
                                     c
                                                                  . ..
                                     (I)
                                     v)
                                           __--  +-'
                                           12000   13000   14000   l!  00
                                                  Energy (cm-1)
                    FIGURE  17  Excited state absorption  of  Cr:BeAl,O,.  (Courtesy of  M. L. Shand, Allied Signal
                    Corporati0n.i
                    absorption is one of the reasons why this laser operates most efficiently around Ihis
                    wavelength. On the long-wavelength side, about 0.83 pm. the emission cross sec-
                    tion and the  excited state cross section are equal. Lasing at wavelxgths  longer
                    than this is not possible under these conditions. On the short-wavelength side, the
                    emission cross section and the excited state absorption cross section again become
                    equal  slightly  on  the  short-wavelength  side  of  the  R  lines,  about  0.68  pm.
                    Although excited state absorption does not prevent laser operation of the R lines, it
                    does significantly reduce the laser performance.
                        Effective stimulated emission cross sections were determined by  using the
                    1McCumber theory for the analysis [25]. At room temperature. the effective stimu-
                    lated emission cross section at the wavelength of peak gain. about 0.77 pm, was
                    calculated to be about 0.6 x 10-24  m2. As the operating temperature increases. the
                    effective stimulated emission cross section increases. nearly linearly. At  200°C.
                    the effective stimulated emission cross section has increased to about 2.0 x 10-24
                    rnl.  Increases in this parameter result from the  increased population of  the T,
                    level. However. the increased effective stimulated emission cross section is balI
                    zinced by  the concomitant decrease in the upper laser level lifetime. For normal
                    mode operation, the shortening of the upper laser level lifetime is not as serious
                    as it is for &-switched operation. Excited state absorption of  the laser radiation
                    will have the effect of decreasing the effective emission cross section.
                        Due  io  the  relatively low  effective  stimulated emission  cross  section and
                    competition from other absorption mechanisms, Cr:BeAl,O,  is usually pumped at
                    high  levels. High pump levels are usually achieved by ;sing  two flashlamps to
                    pump a single laser rod. Although high pumping levels cause thermal problems in
                    many materials, they are compensated to  some degree by  the excellent thermal
                    properties of  the  laser  material. However, because  of  the  high  pump  levels, it
                    becomes more difficult to achieve good beam quality and narrow spectral band-
                    width operation at high pi-fs.
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