Page 316 - Tunable Lasers Handbook
P. 316

276     Norman P.  Barnes

                    such. the lower laser manifold is the AA,  manifold, and the upper laser manifold is
                   the 3T,.  For V, the ratio of Dq/B is lower than Dq/B values usually associated with
                    Cr. Adirect result of  the lower value of  Dq/B is that the IT,  manifold is lower
                   than the 2E  manifold. In doubly ionized Ni the lower laser manifold is the IT, and
                   the upper laser manifold is the IT... In doubly ionized Co the lower laser manifold
                   is the 3A,  and the upper laser manifold is the jT,.
                       Co:MgF,,  Ni:MgF,  and VMgF2 can haveboth electronic and vibronic tran-
                    sitions. For  example, consider the  energy  levels of  Co:MgF,.  Here  the  lower
                   laser manifold is split into six levels by the spin orbit interaction and the crystal
                    field effects. Each of these levels has Kramer’s degeneracy. Splitting of the lower
                    laser manifold is quite large, about 1400 cm-1 for Co:MgF,. - Because of the large
                    splitting.  electronic  transitions  can  occur  between  the  upper  and  lower  laser
                    manifolds.  These  electronic  transitions  produce  relatively  narrow  and  strong
                   peaks in the fluorescence spectrum. If  a transition occurs in the vicinity of these
                   peaks, the lower laser level can have a significant population density, leading to
                    three-level-like operation. On the other hand,  far from these peaks, the transi-
                    tions are vibronic. leading to four-level-like operation.
                       Laser materials are produced by replacing some of the Mg with the proper
                    active atom-Co,  Ni. or V. Although there is some size discrepancy between Mg
                    and the  active atoms, laser materials having concentrations above 0.01 atomic
                    and high optical quality can be produced. Because of  the size discrepancy and
                    the strong interaction between the active atom and the crystal field, a shift in the
                    position of  some of the spectral features can occur at higher concentrations. At
                    concentrations of 0.01 atomic. these effects are minimal.
                       MgF,  is a good material from which to make a laser, primarily because of
                    its relatively high thermal conductivity. MgF,  has a wide range of  transparency,
                    extending from the ultraviolet through the midinfrared, about 6.5  pm. As such,
                    the losses at the laser wavelength can be low. Its wide range of transparency has
                    led  to  its  use  as  a  window  material;  consequently, polishing  techniques  have
                    been developed for this material. Thermal conductivity is high, approaching that
                    of YAG. This, coupled with the refractive index properties. allows the use of the
                    high power densities often associated with laser pumping. The physical proper-
                    ties oT MgF,  are listed on Table 6.
                       MgF,  is a birefringent material with  a relatively low refractive index. This
                    crystal  is- uniaxial,  producing  differences  in  the  refractive  index  and  spectra
                    depending on the polarization. The refractive index is only about  1.38. whereas
                    the  difference between  the  ordinary and  extraordinary indices of  refraction is
                    about 0.01 1. A refractive index this low makes a conventional single-layer broad-
                    band antireflection coating impractical. As such, Brewster’s angle laser materials
                    are often employed where operation over a broad spectral band is desired.
                       Of  the  three  laser  materials.  VMgF,  has,  to  date,  not  been  developed
                    because  of  relatively  inefficient performance.  The  lifetime  of  the  upper  laser
                    level of  this laser material is 2.3 ms  at 77 K. However. relatively poor perfor-
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