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8  Tunable External-Cavity Semiconductor Lasers   41 7

                    This method, like the previous one, is strictly accurate only at the original oscil-
                    lation wavelength of  the  solitary laser diode. At  other wavelengths the gain is
                    lower.  and  lhis  method  tends  to  underestimate  the  reflectance.  Furthermore.
                    when both facets have been coated. it is often difficult to measure m, and the
                    method only gives the product of the two coating reflectivities.
                        The third  method determines the facet reflectance as  a function of  wave-
                    length but requires operating the gain medium inside an ECL [115]. The ECL
                    containing  the  gain  medium  under  test  is  operated  over  wavelength  and  the
                    threshold current is recorded as a function of wavelength. Let Zmal(h)  and Zmln(x)
                    be, respectively, the local maxima and minima. The facet reflectance is given by







                    where the methods for determining y Lm, and rest were described in the previous
                    two subsections. The use of this method for the measurement of the reflectances
                    of single-layer facet coatings has given good agreement with theory (Fig. 40).



                     ? 3.  MULTIMODE SUPPRESSION

                        There are a number of ways to deal with the problem of multi-longitudinal-
                    mode  oscillation.  The  first  line  of  defense  is  in  the  design  of  the  cavity;




                                      t

















                                                   Wavelength, nm
                    FIGURE 40  Reflectance versus wavelength measured with a diode in an extended-cavity laser
                    and calculated for an ideal  single-layer  coating. (Reproduced with  permission  from  Stokes  [ 1151.
                    0 1993 IEEE.)
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