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8  Tunable External-Cavity Semiconductor Lasers   42 1
                     mirror [124]. The average wavelength and the wavelength separation of the feed-
                     back are controlled, respectively, by tangential and sagittal translation of the mask.
                     This scheme was actually implemented using a 10-stripe 0.8-pm laser diode may,
                     but the array was phase locked and functionally it was essentially the same as a
                     high-power single-stripe element. The minimum and maximum wavelength sepa-
                     rations  obtained  were  3.52  and  11.25 nm.  respectively. Because  of  the  need  to
                     provide  equal gain to  each  wavelength. operation  was restricted  to  wavelengths
                     symmetrically displaced with respect to the gain peak.


                     14.3  Multiple-Wavelength ECLs with Multi-stripe Gain Media
                        To avoid the problems associated with multiple wavelengths competing for
                     gain in a single active stripe, a multistripe laser diode array can be coupled to a
                     grating  extended  cavity  to  form  a  inulrichaizrzel  graring  cavity  [ 1251.  The
                     extended cavity can be configured so that each of  a set of  discrete wavelengths
                     resonates between  a different gain stripe and a common collection waveguide,
                     which  can either be itself a separate gain stripe in the array  [126; or an optical
                     fiber  [ 1271. A monolirhically  integrated version. called a multistripe ai-my grarri-
                     ir~g iiitegrnred  cavih  (MAGIC)  laser.  has  also  been  developed  [128-130].
                     Another scheme in which a laser diode array is coupled to a grazing-incidence
                     grating external cavity to generate multiple output wavelengths with nearly con-
                     stant offsets and single-knob tuning has also been proposed [ 13 11.


                     15. WAVELENGTH STABILIZATION

                        Narrow intrinsic linewidths of <lo0 kHz have been demonstrated in ECLs at
                     all the major  wavelengths  (0.67, 0.78, 0.85,  1.33, and  1.55 pm). Despite  these
                     narrow  instantaneous  linewidths,  ECLs  generally  display  much  larger  center-
                     frequency jitter or drift (collectively known as residual FM noise) due to thermal,
                     mechanical, and acoustic disturbances. For many applications, it is important that
                     the residual FM be reduced by active stabilization.
                        There are two requirements for an ECL frequency stabilization system: (1) a
                     fine-tuning mechanism by  which the laser’s frequency can be ser1:oed  and (2) a
                     frequency  reference  is  needed  with  respect  to  which  frequency  drift  can  be
                     sensed. Current modulation  or cavity-length variation  can be  used  to fine-tune
                     the frequency of an ECL. Laser diode temperature can also be used. but it has a
                     slower response time. The transmission peaks of  Fabrj-Perot  etglons and fiber
                     resonators and the absorption lines of atomic or molecular kapors are commonly
                     used  frequency  references.  Frequency  locking  is  typically  implemented  by
                     applying a small frequency dither to the laser to generate the first derivative of
                     the  transmission  or absorption peak. By  applying negative  feedback,  the  laser
                     can then be locked to the zero of the derivative signal.
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