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8  Tunable External-Cavity Semiconductor  Lasers   425


                                                     R,,,   =  0.005
                                      5T
                                        ..
                                   -  4         ..


                                                     Rlnt =  .01
                                                                Rex, =  20

                                   d3

                                                     RI,,  = 0.025












                                            WAVELENGTH
                     FIGURE 43  Threshold gain versus navelength for various combinations  of facet and external-
                     cavity refectances.  demonhtrating evolution  of  regions of  bistabilit).  (Reproduced  with perniission
                     from Zorabedian er al. [Z]. 0 1987 IEEE.)













                                                   25    30
                                                 CURRENT ImAI
                     FIGURE 44  Light output versus current  curve for a bistable ECL. (Reproducsd nith perms-
                     sion from Zorabedian  Yt a/  [23]. 0 1987 IEEE )



                     wavelengths. The stability analysis shows that the tolerance of the laser to resid-
                     ual  facet reflectance  is increased by  increasing external feedback  strength and
                     reducing  01.  There are limits to the effectiveness  of  either  approach. First.  it is
                     difficult to  obtain  external feedback  in  excess  of  the  feedback  of  an uncoated
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