Page 59 - Tunable Lasers Handbook
P. 59

40       R.  C. Sze and D. G. Harris


                  band  remain  virtually  unchanged,  whereas  the  351-nm  band  shows  marked
                  changes in both.
                      The energy stored in XeF resides in a multitude of rotational states, which
                  must be collisionally coupled on time scales that are short compared to the stim-
                  ulated emission rate in order to achieve narrowband lasing. The appearance of
                  clusters of rotational lines lasing relatively independently suggests that the rota-
                  tional relaxation rates in the B and/or X states may be too slow to allow narrow-
                  band lasing. Indeed, it is difficult to achieve efficient injection locking when the
                  small signal gain is much greater than the threshold gain [37.38].
                  2.7.4 XeF  (C-+A)
                      The XeF molecule also emits a broad continuum between 470 and 500 nm
                  from the C+A  transition (l rL2n). The A state is repulsive, without a potential
                  well, so the emission is a true continuum, allowing narrowband lasing as well as
                  continuous  tuning  across  the  emission  spectrum. The  excitation  sources  have
                  been both short-pulse and long-pulse electron beams. Under short-pulse excita-
                  tion (10 MW/cm; for 10 ns) the media has optical absorption during the electron
                  beam deposition time and then gain (3Wcm) in the plasma afterglow. Narrow-
                  band tuning as well as injection seeding has been used to tune across the gain
                  profile  [39-43].  The media  show gain throughout the energy deposition pulse
                  under low-power long-pulse electron beam excitation (250 kW/cm3 for 700 ns).
                  However strong lasing is reached only after 300 ns [44].

                  2.1.5 XeCl(308 nrn)
                      The C state of XeCl molecule lies approximately 230 cm-1 below the B state.
                  Additionally, the ground state is bound by  255 cm-1,  lasing in  the B+X  bands
                  occurs predominantly on the 0-1  band but also weakly on the 0-2  and e3 bands
                   [45]. Although XeCl lasers have been made to operate narrow band, attempts to
                  injection seed amplifiers have shown a strong wavelength dependence [46], which
                  has been attributed to saturation of the lower vibrational levels [47]. Owing to the
                  long gas lifetime and ability to use inexpensive nonquartz optics, XeCl has been
                  the preferred excimer to test line-narrowing techniques and novel resonators.

                   2.7.6  Other Rare Gas Halide Excirners
                      Lasing  has  been  observed in  several other rare  gas  halides,  and although
                   these systems have not been developed to the extent of those already discussed
                   they do offer potentially tunable radiation. Excimer emission has been observed
                   at 175.0 nm in ArCl [27], 222 nm in KrCl [48,49], and 281.8 nm in XeBr [50],
                   which are believed to be excimers with repulsive ground states. A short operat-
                   ing  lifetime  for  XeBr  has  not  yet  been  thoroughly  addressed  [51]. There  has
                   been renewed interest in KrCl because it offers potentially higher efficiency than
                   XeCl  [52.53]. The pulse lengths have been extended to  185 ns, but nothing has
                   been pursued in the area of spectral control [54,55].
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