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26     CHAPTER 1 Solar Cells and Arrays: Principles, Analysis, and Design




                         semiconductor device. This loss can be modeled by a shunt resistance (R sh ). Its effect
                         is much less visible in a solar cell compared with the series resistance. Now, the net
                         output current of the cell, considering both effects of R s and R sh , is given by
                                                               !
                                                        ðVþIRs Þ   V þ IR s
                                            I ¼ I ph   I s e  nV T   1                 (1.43)
                                                                     R sh
                            Eq. (1.43) can be represented by the circuit model in Fig. 1.21. It is the solar cell
                         model recommended to calculate the IeV characteristics of the solar cell under any
                         operating condition.
                            In this model, the current source represents I ph , the current passing in the diode
                         represents the dark current, while R s and R sh represents series resistance and the
                         shunt resistance of the solar cell. This equivalent circuit is that of a real diode
                         added to it the photogenerated current I ph .Normally R sh is negligible in solar
                         cell mode. But when the solar cell is reverse biased, R sh must be taken into
                         consideration.
                            Eq. (1.43) is represented graphically in Fig. 1.22. Here, I ph ¼ I sc as discussed
                         before. V oc is the open circuit voltage of the cell. It can be obtained from Eq.
                         (1.43) by putting I ¼ 0 and V ¼ V oc and neglecting R s (R s ¼ 0) and R sh (R sh ¼ N)

                                                               I ph
                                                    V oc ¼ nV T ln                     (1.44)
                                                               I s
                            The open circuit voltage of an electric source is its driving electromotive force. It
                         must be as high as possible. This can be achieved according to Eq. (1.44) by maxi-
                         mizing I ph and minimizing I s . The maximization of I ph was discussed in the last sec-
                         tion. The minimization of I s was discussed in Section 1.3. It can be achieved by
                         increasing N A , N D , L n , and L p and decreasing n j . It was found that increasing the
                         doping concentration of a semiconductor causes a decrease in L n and L p and an
                         increase in its n i .
                            Therefore, there are optimum doping concentrations leading to highest open
                                                         17
                                                             3
                                                                           19
                         circuit voltage. For Si, e.g., N A ¼ 10 /cm and N D w 10 /cm 3.  To draw the
                         maximum power from a source it must be loaded with a matched load. The
                         matched load is the load to operate the solar cell at its maximum power point where











                         FIGURE 1.21
                         The equivalent circuit of solar cell.
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