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AMI Infrar ed Crystalline Materials    223


                                  Growth rate
                             (2–5 mm/min) (5–12 in/h)
                         Seed crystal <111>




                             Single crystal




                          Freezing interface
                                 RF coil
                              Molten zone
                           Melting interface



                            Polycrystal rod





              FIGURE 9.9  Diagram depicting the growth of single-crystal silicon in the AMI
              vacuum fl oat zone machine.





























        FIGURE 9.10  AMI silicon vacuum fl oat zone chambers.
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