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AMI Infrar ed Crystalline Materials    241

              The improvement appears to be related to their relative hardness.
                 John Hall of the U.S. Army Night Vision Laboratory at Ft. Belvoir
              became a driving force for the use of GaAs in place of germanium in
              the infrared systems in the Army tanks. He organized a meeting to
              consider nongermanium optical materials for 8- to 12-µm FLIR pro-
              duction. Of particular importance were the optical requirements for
              the Horizontal Integration GEN II FLIR program scheduled to supply
              thousands of M1-Abrams, M8-AGS, and M2 Bradley tanks with sec-
              ond-generation FLIRs. The meeting was held at Ft. Belvoir in May
              1994. Attendees included TI (GaAs), Eagle Picher (Ge), Morton Inter-
              national (ZnSe-ZnS), Exotic Materials (Ge), and AMI (GaAs).
                 Presentations were made describing materials produced and
              advances made recently. The reader has already learned what AMI
                      25
              presented.  The TI presentation by Paul Klocek was very extensive,
              demonstrating the amount of effort expended and progress made
              over the last several years. TI enthusiasm for the change to GaAs
              seemed lacking. The situation in optical Ge and Si production by
              Dennis Thomas of Eagle Picher was positive. The Morton presenta-
              tion by Dennis McAllister for ZnSe and ZnS production covered
              all the widely used CVD materials. Design and fabrication were dis-
              cussed. Hall talked about new designs using GaAs including some he
              had already made and tested. His conclusion was that GaAs will
              prove to be very useful for Army FLIR applications and can dramati-
              cally improve the ability of the HTI Gen II FLIR to meet range and
              bore sight performance in high-temperature environments by reducing
              the total amount of Ge used. John Hall’s words were correct, but
              resistance at high levels of decision authority led to continued use of
              Ge optics in all HTI Gen II FLIR systems. 26
                 Hall was successful in codeveloping with personnel from Hughes
              El Segundo an HTI-compatible, GaAs-based imager which is still
              used by the Night Vision Lab for special testing. Hall eventually left
              the Night Vision Lab and joined the private sector. He continues to
              find applications for GaAs optics in the new dual-band “Gen III” sensor
              systems. Hall has already delivered prototype systems to the Night
              Vision Lab that have been used for very successful demonstrations
              and data collection since 2006. 27
                 Meanwhile, AMI found great interest on the part of designers
              and system engineers at Lockheed Martin in Orlando to use GaAs
              in their upgrade of the TADS PNVS helicopter system. Working
              with senior optical designer Al Lyon and optics production man-
              ager Bob Icovazzi of LMCO, AMI began supplying small amounts
              of GaAs for prototype designs using the AMI units. Finally, in late
              1994, AMI on a best-efforts basis agreed to attempt to grow a single-
              crystal plate in which the flat faces would have the desired crystal-
              line orientation, <100>, as determined by a seed placed in the melt.
              The purpose was to produce an outside surface less susceptible to
              rain impact damage. Obviously, use of the horizontal Bridgman was
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